Ordering number : ENA0933
VEC2601
SANYO Semiconductors
DATA SHEET
VEC2601
Features
•
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
•
•
•
A composite type of a low on-resistance P-channel MOSFET and a small signal N-channel MOSFET for driving
P-channel MOSFET enables high-density mounting.
Best suited for load switches.
2.5V drive.
0.75mm mount high.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board
(900mm
2
✕0.8mm)1unit
Conditions
N-channel
30
±10
0.15
0.6
0.9
150
--55 to +150
P-channel
-
-20
±10
--3
-
-12
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100µA
VDS=10V, ID=80mA
0.4
0.15
0.22
30
1
±10
1.3
V
µA
µA
V
S
Symbol
Conditions
Ratings
min
typ
max
Unit
Marking : BD
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91207PE TI IM TC-00000864 No. A0933-1/6
VEC2601
Continued from preceding page.
Parameter
Symbol
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=80mA, VGS=4V
ID=40mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=150mA
VDS=10V, VGS=10V, ID=150mA
VDS=10V, VGS=10V, ID=150mA
IS=150mA, VGS=0V
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
VGS=±8V, VDS=0V
VDS=--10V, ID=-
-1mA
VDS=--10V, ID=-
-1.5A
ID=--2A, VGS=--4.5V
ID=--1A, VGS=--2.5V
ID=--0.3A, VGS=-
-1.8V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--4.5V, ID=--3A
VDS=--10V, VGS=--4.5V, ID=--3A
VDS=--10V, VGS=--4.5V, ID=--3A
IS=--3A, VGS=0V
--20
--1
±10
--0.4
2.9
4.9
55
77
112
680
115
80
13
53
77
62
8.2
1.7
2.1
--0.88
--1.2
72
108
168
--1.3
Ratings
min
typ
2.9
3.7
6.4
7.0
5.9
2.3
19
65
155
120
1.58
0.26
0.31
0.87
1.2
max
3.7
5.2
12.8
Unit
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
V
µA
µA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm (typ)
7012-009
0.25
Electrical Connection
8
7
6
5
0.3
0.15
8
7
6 5
0.25
1
2
2.9
3
0.65
4
1
0.75
2
3
4
1 : Source1
2 : Gate1
3 : Drain2
4 : Drain2
5 : Source2
6 : Gate2
7 : Drain1
8 : Drain1
Top view
2.8
2.3
1 : Source1
2 : Gate1
3 : Drain2
4 : Drain2
5 : Source2
6 : Gate2
7 : Drain1
8 : Drain1
SANYO : VEC8
0.07
No. A0933-2/6
VEC2601
Switching Time Test Circuit
[N-channel]
4V
0V
VIN
ID=80mA
RL=187.5Ω
VIN
VDD=15V
[P-channel]
VIN
0V
--4.5V
VIN
ID= --1.5A
RL=6.67Ω
VOUT
VDD= --10V
D
PW=10µs
D.C.≤1%
VOUT
D
PW=10µs
D.C.≤1%
G
G
P.G
VEC2601
50Ω
P.G
S
50Ω
VEC2601
S
0.16
0.14
0.12
0.10
0.08
ID -- VDS
5V
[Nch]
0.30
ID -- VGS
VDS=10V
[Nch]
Drain Current, ID -- A
Drain Current, ID -- A
6.0
0.15
VGS=1.5V
0.06
0.04
0.02
0
0
0.2
0.4
0.6
0.8
1.0
IT00029
0.10
0.05
0
0
0.5
1.0
1.5
2.0
2.5
3.0
IT00030
Drain-to-Source Voltage, VDS -- V
10
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
10
[Nch]
Ta=25°C
RDS(on) -- ID
75
°
C
V
0.20
25
[Nch]
VGS=4V
5
7 1.0
IT00032
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10
7
5
ID=80mA
40mA
Ta=75°C
3
25°C
--25°C
2
1.0
0.01
2
3
5
7
0.1
2
3
Gate-to-Source Voltage, VGS -- V
10
IT00031
RDS(on) -- ID
Drain Current, ID -- A
100
7
[Nch]
VGS=2.5V
RDS(on) -- ID
VGS=1.5V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
7
5
3
2
5
Ta=75°C
25°C
3
--25°C
10
7
5
3
2
Ta=75°C
--25°C
25°C
2
1.0
0.01
2
3
5
7
0.1
2
3
5
Drain Current, ID -- A
1.0
IT00033
7
1.0
0.001
2
3
5
7
0.01
2
3
5
Drain Current, ID -- A
No. A0933-3/6
°
C
[Nch]
7
0.1
IT00034
4.0V
2.
0.25
V
2.0
Ta=
--25
3.0
V
3.5V
°
C
VEC2601
7
RDS(on) -- Ta
[Nch]
1.0
yfs
-- ID
[Nch]
VDS=10V
6
Forward Transfer Admittance,
yfs
-- S
7
5
3
2
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
5
4
2.5
S=
VG
m
=40
, ID
V
A
--
Ta=
25
°
C
25°C
75
°
C
3
A
80m
I D=
,
4.0V
S=
VG
0.1
7
5
3
2
2
1
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
0.01
0.01
2
3
5
7
0.1
2
3
5
Ambient Temperature, Ta --
°C
1.0
7
5
IT00035
IS -- VSD
Drain Current, ID -- A
1000
7
1.0
IT00036
[Nch]
VGS=0V
7
SW Time -- ID
[Nch]
VDD=15V
VGS=4V
Source Current, IS -- A
3
2
Switching Time, SW Time -- ns
5
3
2
td(off)
tf
75
°
C
25
°
C
--2
5
°
C
Ta
=
0.1
7
5
3
2
100
7
5
3
2
tr
td(on)
0.01
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
IT00037
10
0.01
2
3
5
7
0.1
2
IT00038
Diode Forward Voltage, VSD -- V
100
7
5
Drain Current, ID -- A
10
9
Ciss, Coss, Crss -- VDS
[Nch]
f=1MHz
VGS -- Qg
VDS=10V
ID=150mA
[Nch]
Gate-to-Source Voltage, VGS -- V
12
14
16
18
20
8
7
6
5
4
3
2
1
Ciss, Coss, Crss -- pF
3
2
10
7
5
3
2
Ciss
Coss
Crss
1.0
0
2
4
6
8
10
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Drain-to-Source Voltage, VDS -- V
2
1.0
7
5
IT00039
Total Gate Charge, Qg -- nC
IT00040
ASO
[Nch]
IDP=0.6A
Drain Current, ID -- A
3
2
0.1
7
5
3
2
0.01
7
5
3
2
ID=0.15A
PW
≤10µs
1
10 ms
10
ms
0m
s
DC
(T o
a=
pe
25
ra
°
C
tio
) n
Operation in this
area is limited by RDS(on).
0.001
0.01
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
2
✕0.8mm)
1unit
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
5 7
Drain-to-Source Voltage, VDS -- V
IT12926
No. A0933-4/6
VEC2601
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
ID -- VDS
--3.
0
--2
V
.5V
--3.
5
[Pch]
--7
ID -- VGS
VDS= --10V
[Pch]
V
--2.0
V
Drain Current, ID -- A
--4.0
V
V
--1.8
Drain Current, ID -- A
--6
--5
--4.5
V
--4
--3
--2
--1
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Ta
=7
5
°
C
25
°
C
--25
°
C
--1.4
--1.6
--1.8
VGS=
--1.5V
--2.0
Drain-to-Source Voltage, VDS -- V
160
IT11952
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
160
IT06417
[Pch]
Ta=25
°
C
RDS(on) -- Tc
=
--0
, ID
8V
[Pch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
140
120
100
80
60
40
20
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
140
.3A
120
.
=
--1
VGS
ID= --0.3A
--2.0A
100
80
60
1.0A
=
--
ID
5V,
--2.
=
A
V GS
--2.0
I D=
.5V,
=
--4
VGS
40
20
--60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
3
IT11856
Case Temperature, Tc --
°C
--10
7
5
3
2
IT11857
y
fs -- ID
[Pch]
VDS= --10V
IS -- VSD
[Pch]
VGS=0V
Forward Transfer Admittance,
y
fs -- S
2
5
°
C
--0.3
--0.4
--0.5
10
7
5
3
2
Source Current, IS -- A
--
Ta=
C
25
°
C
75
°
C
25
°
--0.1
7
5
3
2
1.0
7
--0.1
2
3
5
7
--1.0
2
3
5
--10
IT06420
7
--0.01
7
5
3
2
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
--1.2
--0.001
--0.2
Drain Current, ID -- A
5
3
SW Time -- ID
[Pch]
VDD= --10V
VGS= --4.5V
2
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
25
°
C
--25
°
C
Ta=
7
--1.0
7
5
3
2
IT06421
[Pch]
f=1MHz
Switching Time, SW Time -- ns
2
1000
100
7
5
3
2
td(off)
tf
Ciss, Coss, Crss -- pF
7
5
3
2
Ciss
tr
td(on)
Coss
100
7
5
3
Crss
10
7
5
--0.1
2
3
5
7
--1.0
2
3
5
7
0
--2
--4
--6
--8
--10
--12
--14
--16
--18
--20
Drain Current, ID -- A
IT06422
Drain-to-Source Voltage, VDS -- V
IT06423
No. A0933-5/6
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