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IDT6168SA45SO

Description
Standard SRAM, 4KX4, 45ns, CMOS
Categorystorage    storage   
File Size70KB,7 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric View All

IDT6168SA45SO Overview

Standard SRAM, 4KX4, 45ns, CMOS

IDT6168SA45SO Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Reach Compliance Codenot_compliant
Maximum access time45 ns
I/O typeCOMMON
JESD-609 codee0
memory density16384 bit
Memory IC TypeSTANDARD SRAM
memory width4
word count4096 words
character code4000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4KX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSO(UNSPEC)
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply5 V
Certification statusNot Qualified
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
CMOS STATIC RAM
16K (4K x 4-BIT)
Integrated Device Technology, Inc.
IDT6168SA
IDT6168LA
FEATURES:
• High-speed (equal access and cycle time)
— Military: 15/20/25/35/45ns (max.)
— Commercial: 15/20/25/35ns (max.)
• Low power consumption
• Battery backup operation—2V data retention voltage
(IDT6168LA only)
• Available in high-density 20-pin ceramic or plastic DIP, 20-
pin SOIC.
• Produced with advanced CMOS high-performance
technology
• CMOS process virtually eliminates alpha particle soft-error
rates
• Bidirectional data input and output
• Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The IDT6168 is a 16,384-bit high-speed static RAM orga-
nized as 4K x 4. It is fabricated using lDT’s high-performance,
high-reliability CMOS technology. This state-of-the-art tech-
nology, combined with innovative circuit design techniques,
provides a cost-effective approach for high-speed memory
applications.
Access times as fast 15ns are available. The circuit also
offers a reduced power standby mode. When
CS
goes HIGH,
the circuit will automatically go to, and remain in, a standby
mode as long as
CS
remains HIGH. This capability provides
significant system-level power and cooling savings. The low-
power (LA) version also offers a battery backup data retention
capability where the circuit typically consumes only 1µW
operating off a 2V battery. All inputs and outputs of the
IDT6168 are TTL-compatible and operate from a single 5V
supply.
The IDT6168 is packaged in either a space saving 20-pin,
300-mil ceramic or plastic DIP, 20-pin SOIC providing high
board-level packing densities.
Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.
FUNCTIONAL BLOCK DIAGRAM
A
0
V
CC
GND
ADDRESS
DECODER
16,384-BIT
MEMORY ARRAY
A
11
I/O
0
I/O
1
I/O
2
I/O
3
I/O CONTROL
INPUT
DATA
CONTROL
CS
WE
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
3090 drw 01
MILITARY AND COMMERCIAL TEMPERATURE RANGE
©1996
Integrated Device Technology, Inc.
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
MAY 1996
3090/2
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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