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HY62EF16400ALLM-12

Description
Standard SRAM, 256KX16, 120ns, CMOS, PBGA48, MICRO, BGA-48
Categorystorage    storage   
File Size201KB,13 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Download Datasheet Parametric View All

HY62EF16400ALLM-12 Overview

Standard SRAM, 256KX16, 120ns, CMOS, PBGA48, MICRO, BGA-48

HY62EF16400ALLM-12 Parametric

Parameter NameAttribute value
MakerSK Hynix
Parts packaging codeBGA
package instructionVFBGA,
Contacts48
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time120 ns
JESD-30 codeR-PBGA-B48
JESD-609 codee1
length8.4 mm
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width16
Number of functions1
Number of terminals48
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height0.95 mm
Maximum supply voltage (Vsup)2.2 V
Minimum supply voltage (Vsup)1.8 V
Nominal supply voltage (Vsup)2 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
width7.4 mm
HY62UF16400A/ HY62QF16400A/ HY62EF16400A/
HY62SF16400A Series
256Kx16bit full CMOS SRAM
PRELIMINARY
DESCRIPTION
The HY62UF16400A / HY62QF16400A /
HY62EF16400A / HY62SF16400A is a high
speed, super low power and 4Mbit full CMOS
SRAM organized as 262,144 words by 16bits. The
HY62UF16400A
/
HY62QF16400A
/
HY62EF16400A / HY62SF16400A uses high
performance full CMOS process technology and
is designed for high speed and low power circuit
technology. It is particularly well-suited for the
high density low power system application. This
device has a data retention mode that guarantees
data to remain valid at a minimum power supply
voltage of 1.5V.
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup(LL/SL-part)
- 1.5V(min) data retention
Standard pin configuration
- 48ball uBGA
Product
Voltage
Speed
Operation
Standby Current(uA)
No.
(V)
(ns)
Current(mA)
LL
SL
HY62UF16400A
3.0
55/70/85
15
20
4
HY62UF16400A-I
3.0
55/70/85
15
20
4
HY62QF16400A
2.5
70/85/100
10
20
4
HY62QF16400A-I
2.5
70/85/100
10
20
4
HY62EF16400A
2.0
85/100/120
10
20
4
HY62EF16400A-I
2.0
85/100/120
10
20
4
HY62SF16400A
1.8
100/120/150
10
20
4
HY62SF16400A-I
1.8
100/120/150
10
20
4
Note 1. E.T. : Extended Temperature, Normal : Normal Temperature
2. Current value is max.
Temperature
(°C)
0~70(Normal)
-40~85(E.T.)
0~70(Normal)
-40~85(E.T.)
0~70(Normal)
-40~85(E.T.)
0~70(Normal)
-40~85(E.T.)
PIN CONNECTION
( Top View )
A0
BLOCK DIAGRAM
SENSE AMP
ROW
DECODER
I/O1
OUTPUT BUFFER
/LB
/OE A0
A1
A4
A6
A2
NC
ADD INPUT BUFFER
IO9 /UB A3
IO10 IO11 A5
/CS IO1
IO2 IO3
IO4 Vcc
DECODER
I/O8
Vss IO12 A17 A7
Vcc IO13 NC
MEMORY ARRAY
1024x128x16
WRITE DRIVER
I/O9
A16 IO5 Vss
IO15 IO14 A14 A15 IO6 IO7
IO16 NC
NC
A8
A12 A13 /WE IO8
A9
A10 A11 NC
A17
/CS
/OE
/LB
/UB
/WE
I/O16
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
/LB
/UB
Pin Funtion
Chip Select
Write Enable
Output Enable
Lower Byte Control(I/O1~I/O8)
Upper Byte Control(I/O9~I/O16)
Pin Name
I/O1~I/O16
A0~A17
Vcc
Vss
NC
Pin Funtion
Data Input/Output
Address Input
Power(3.0V/2.5V/2.0V/1.8V)
Ground
No Connection
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.02 /Feb. 99
Hyundai Semiconductor

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