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SYS81000FKXI-85

Description
SRAM Module, 1MX8, 85ns, CMOS, 0.600 INCH, LOW PROFILE, PLASTIC, DIP-36
Categorystorage    storage   
File Size113KB,7 Pages
ManufacturerMOSA
Websitehttp://www.mosanalog.com
Download Datasheet Parametric View All

SYS81000FKXI-85 Overview

SRAM Module, 1MX8, 85ns, CMOS, 0.600 INCH, LOW PROFILE, PLASTIC, DIP-36

SYS81000FKXI-85 Parametric

Parameter NameAttribute value
MakerMOSA
Parts packaging codeMODULE
package instruction,
Contacts36
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time85 ns
JESD-30 codeR-XDMA-T36
memory density8388608 bit
Memory IC TypeSRAM MODULE
memory width8
Number of functions1
Number of terminals36
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX8
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formTHROUGH-HOLE
Terminal locationDUAL
1M x 8 SRAM MODULE
SYS81000FKX - 70/85/10/12
11403 West Bernado Court, Suite 100, San Diego, CA 92127.
Tel No: (001) 858 674 2233, Fax No: (001) 858 674 2230
Issue 3.0 : February 2000
Features
Access Times of 70/85/100/120 ns.
36 Pin JEDEC standard Dual-In-Line package.
5 Volt Supply ± 10%.
Low Power Dissipation:
Average (min cycle)
565mW (max).
Standby (-L Part CMOS)
3mW (max).
Completely Static Operation.
Low Voltage V
CC
Data Retention.
Directly TTL Compatible.
On-board Supply Decoupling Capacitors.
Description
The SYS81000FKX is a plastic 8 Mbit Static RAM
Module housed in a JEDEC standard 36 pin Dual
In-Line package organised as 1M x8.
The module utilises SRAM's housed in TSOP II
packages, and uses single sided surface mount
techniques, buried decoder and dual board
construction to achieve a very high density module.
Fast access times of 70 to 120ns are available. The
OE pin allows faster access times than address
access during a read cycle. Low voltage data
retention mode available ( -L Version only).
Block Diagram
A0~A18
D0~D7
WE
OE
Pin Definition
A0
A1
A2
A3
A4
CS
D0
D1
Vcc
GND
D2
D3
WE
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
TOP VIEW
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
NC
A19
A18
A17
A16
OE
D7
D6
GND
Vcc
D5
D4
A15
A14
A13
A12
A11
A10
512K x 8
SRAM
512K x 8
SRAM
A19
CS
Decoder
Pin Functions
Address Inputs
Data Input/Output
Chip Select
Write Enable
Output Enable
Power (+5V)
Ground
A0 ~ A19
D0 ~ D7
CS
WE
OE
V
CC
GND
Package Details
Plastic 36 pin 0.6" Jedec DIP
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