EEWORLDEEWORLDEEWORLD

Part Number

Search

DF10S-E3

Description
1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size87KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric Compare View All

DF10S-E3 Overview

1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

DF10S-E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
package instructionR-PDSO-G4
Contacts4
Manufacturer packaging codeCASE DFS
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresUL RECOGNIZED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current50 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
DF005S, DF01S, DF02S, DF04S, DF06S, DF08S, DF10S
www.vishay.com
Vishay General Semiconductor
Miniature Glass Passivated Single-Phase
Surface Mount Bridge Rectifiers
FEATURES
• UL recognition, file number E54214
• Ideal for automated placement
~
~
~
• High surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: For definitions of
compliance please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
~
Case Style DFS
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
DFS
1A
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
= 1.0 A
T
J
max.
Diode variations
MECHANICAL DATA
Case:
DFS
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked on body
per
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
50 A
5 μA
1.1 V
150 °C
Quad
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output rectified current
at T
A
= 40 °C
(1)
Peak forward surge current single half
sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
SYMBOL
DF005S
DF005S
50
35
50
DF01S
DF01S
100
70
100
DF02S
DF02S
200
140
200
DF04S
DF04S
400
280
400
1.0
50
10
- 55 to + 150
DF06S
DF06S
600
420
600
DF08S
DF08S
800
560
800
DF10S
DF10S
1000
700
1000
V
V
V
A
A
A
2
s
°C
UNIT
Note
(1)
Units mounted on PCB with 0.51" x 0.51" (13 mm x 13 mm) copper pads
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward
voltage drop per diode
Maximum DC reverse current at
rated DC blocking voltage per diode
Typical junction capacitance per
diode
(1)
Note
(1)
Measured at 1.0 MHz and applied reverse voltage of 4.0 V
TEST CONDITIONS SYMBOL DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNIT
1.0 A
T
A
= 25 °C
T
A
= 125 °C
V
F
I
R
C
J
1.1
5.0
500
25
V
μA
pF
Revision: 19-Aug-13
Document Number: 88573
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

DF10S-E3 Related Products

DF10S-E3 DF005S DF08S DF10S
Description 1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Is it Rohs certified? conform to incompatible incompatible incompatible
package instruction R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Reach Compliance Code unknow unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Maximum non-repetitive peak forward current 50 A 50 A 50 A 50 A
Number of components 4 4 4 4
Phase 1 1 1 1
Number of terminals 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -65 °C -65 °C -65 °C
Maximum output current 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1000 V 50 V 800 V 1000 V
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Humidity sensitivity level 1 1 1 -
Peak Reflow Temperature (Celsius) 260 225 225 -
Maximum time at peak reflow temperature 40 NOT SPECIFIED NOT SPECIFIED -
Base Number Matches - 1 1 1
Hearing aid made with TDA2822
This hearing aid for the deaf is composed of TDA2822 dual-power amplifier integrated circuit plus a small number of peripheral components. Compared with popular machines on the market, it has the char...
LMYBIGBOSS Analog electronics
【Renesas CPK-RA2L1 Development Board】Review - 1: Installing BSP
[i=s]This post was last edited by MianQi on 2022-11-12 20:34[/i]From a user's perspective, the two most important components of E2 Studio are: 1. Flexible Software Package (FSP) , download address: ht...
MianQi Renesas Electronics MCUs
[Xingkong Board Python Programming Learning Main Control Board] Unboxing Report
[Xingkong Board Python Programming Learning Main Control Board] Unboxing Report First of all, I sincerely thank eeword and DFRobot for giving me the opportunity to participate in the evaluation of "DF...
宜城龙山 Embedded System
[MPS Mall Big Offer Experience Season] Unboxing
I took advantage of the event to buy a few boost chips for testing, and also bought the official inductor. The event was well received!...
hbeneth Power technology
[Xingkong Board Python Programming Learning Main Control Board] Evaluation 4. Initial exploration of the development board: Introduction to the WEB server
[i=s]This post was last edited by Tianyiwuzui on 2022-11-13 20:29[/i]In the previous review, we briefly introduced the four connection methods of the Xingkong board. This review article will introduce...
天意无罪 Embedded System
[RTT & Renesas ultra-low power MCU RA2L1 development board] Evaluation of DAC module introduction and test
DAC module introduction Refer to the chapter 31. 12-Bit D/A Converter (DAC12) in Renesas RA2L1 Group User's Manual: Hardware feature12-bit op amp, 1 channel. Can be started by ELC control. ADC12 can c...
qinyunti Renesas Electronics MCUs

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2761  289  324  2856  1818  56  6  7  58  37 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号