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2N7279

Description
5A, 250V, 0.715ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
CategoryDiscrete semiconductor    The transistor   
File Size69KB,2 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

2N7279 Overview

5A, 250V, 0.715ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA

2N7279 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-MSFM-P3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresRADIATION HARDENED
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (ID)5 A
Maximum drain-source on-resistance0.715 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-257AA
JESD-30 codeR-MSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Transistor component materialsSILICON
Base Number Matches1

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