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PSMN7R6-100BSE_15

Description
N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK
File Size275KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

PSMN7R6-100BSE_15 Overview

N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK

PSMN7R6-100BSE
18 December 2012
N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK
Product data sheet
1. General description
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of
NXP's "NextPower Live" portfolio, the PSMN7R6-100BSE complements the latest "hot-
swap" controllers - robust enough to withstand substantial inrush currents during turn on,
whilst offering a low R
DS(on)
characteristic to keep temperatures down and efficiency up in
continued use. Ideal for telecommunication systems based on a 48 V backplane / supply
rail.
2. Features and benefits
Enhanced forward biased safe operating area for superior linear mode operation
Very low R
DS(on)
for low conduction losses
3. Applications
Electronic fuse
Hot swap
Load switch
Soft start
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
T
mb
= 100 °C; V
GS
= 10 V;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 12
V
GS
= 10 V; I
D
= 25 A; V
DS
= 50 V;
Fig. 14; Fig. 15
-
-
41
128
-
-
nC
nC
[1]
Min
-
-
-
Typ
-
-
-
Max
100
75
296
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
6.5
7.6
Dynamic characteristics
Q
GD
Q
G(tot)
gate-drain charge
total gate charge
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