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RJK5032DPD

Description
500V - 3A - MOS FET High Speed Power Switching
File Size86KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RJK5032DPD Overview

500V - 3A - MOS FET High Speed Power Switching

Preliminary
Datasheet
RJK5032DPD
500V - 3A - MOS FET
High Speed Power Switching
Features
Low on-state resistance
R
DS(on)
= 2.1
typ. (at I
D
= 1.5 A, V
GS
= 10 V, Ta = 25C)
Low drive current
High speed switching
R07DS0836EJ0200
Rev.2.00
Aug 08, 2012
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
4
1.
2.
3.
4.
S
D
G
12
3
Gate
Drain
Source
Drain
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. STch = 25C, Tch
150C
3. Value at Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
Note1
I
DR (pulse)
Note2
I
AP
Note2
E
AR
Pch
Note 3
ch-c
Tch
Tstg
Note1
Value
500
30
3
6
3
6
3
0.5
40.3
3.1
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0836EJ0200 Rev.2.00
Aug 08, 2012
Page 1 of 6

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