SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUR50
•
•
•
High Pulse Power, Fast Switching.
Hermetic Metal TO3 Package.
Ideally suited for Motor Control
and Power Switching Circuits
Screening Options Available
•
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
tp = 10ms
Peak Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
200V
125V
10V
70A
100A
20A
350W
2W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
0.5
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 6522
Issue 2
Page 1 of 3
Website:
http://www.semelab-tt.com
SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUR50
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols
V(BR)CEO
V(BR)EBO
ICEO
ICBO
IEBO
VCE(sat)
(1)
(1)
Parameters
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Forward-current transfer
ratio
Test Conditions
IC = 50mA
IE = 1.0mA
VCE = 125V
VCB = 200V
IB = 0
IE = 0
TC = 125°C
VEB = 7V
IC = 35A
IC = 70A
IC = 35A
IC = 70A
IC = 5A
IC = 50A
IC = 0
IB = 2A
IB = 7A
IB = 2A
IB = 7A
VCE = 4V
VCE = 4V
Min.
125
10
Typ
Max.
Units
V
1.0
0.2
2
0.2
1.0
0.8
1.5
1.8
1.6
20
15
2
140
V
mA
VBE(sat)
(1)
(1)
hFE
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
IC = 1.0A
f = 1.0MHz
Turn-On Time
Storage Time
Fall Time
IC = 70A
IB1 = 7A
IC = 70A
IB1 = -IB2 = 7A
VCC = 60V
VCC = 60V
0.5
0.82
0.1
1.2
2
0.5
µs
VCE = 5V
10
16
MHz
ton
ts
tf
Notes
(1) Pulse Width
≤
300us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 6522
Issue 2
Page 2 of 3
SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUR50
MECHANICAL DATA
Dimensions in mm (inches)
3 9 .9 5 (1 .5 7 3 )
m a x .
3 0 .4 0 (1 .1 9 7 )
3 0 .1 5 (1 .1 8 7 )
1 7 .1 5 (0 .6 7 5 )
1 6 .6 4 (0 .6 5 5 )
2 0 .3 2 (0 .8 0 0 )
1 8 .8 0 (0 .7 4 0 )
d ia .
1 1 .1 8 (0 .4 4 0 )
1 0 .6 7 (0 .4 2 0 )
1 .7 8 (0 .0 7 0 )
1 .5 2 (0 .0 6 0 )
1 .5 7 (0 .0 6 2 )
1 .4 7 (0 .0 5 8 )
d ia .
2 p lc s .
TO3 (TO-204AE)
Pin 1 - Base
Pin 2 - Emitter
Case - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
1 2 .0 7 (0 .4 7 5 )
1 1 .3 0 (0 .4 4 5 )
7 .8 7 (0 .3 1 0 )
6 .9 9 (0 .2 7 5 )
2 6 .6 7 (1 .0 5 0 )
m a x .
4 .0 9 (0 .1 6 1 )
3 .8 4 (0 .1 5 1 )
d ia .
2 p lc s .
Website:
http://www.semelab-tt.com
Document Number 6522
Issue 2
Page 3 of 3
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