BC857WT/R datasheet, PDF - EEWORLD Datasheet

BC857WT/R: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size176KB，6 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/; Environmental Compliance

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BC857WT/R Overview

Transistor

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Philips Semiconductors (NXP Semiconductors N.V.)
Objectid	101366873
package instruction	,
Reach Compliance Code	unknown
compound_id	178096499
Maximum collector current (IC)	0.1 A
Configuration	Single
Minimum DC current gain (hFE)	125
JESD-609 code	e3
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.2 W
surface mount	YES
Terminal surface	Matte Tin (Sn)
Nominal transition frequency (fT)	100 MHz

	BC857WT/R	BC857BWT/R	BC856WT/R
Description	Transistor	Transistor	Transistor
Is it Rohs certified?	conform to	conform to	conform to
Maker	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code	unknown	unknown	unknown
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A
Configuration	Single	Single	Single
Minimum DC current gain (hFE)	125	220	125
JESD-609 code	e3	e3	e3
Maximum operating temperature	150 °C	150 °C	150 °C
Polarity/channel type	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.2 W	0.2 W	0.2 W
surface mount	YES	YES	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz

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