2SK649X datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> 2SK649X

Preview

2SK649X: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size261KB，6 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html

Download Datasheet Parametric Compare View All

2SK649X Overview

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

2SK649X Parametric

Parameter Name	Attribute value
package instruction	DISK BUTTON, O-CRDB-F4
Reach Compliance Code	unknow
Configuration	SINGLE
Minimum drain-source breakdown voltage	6 V
FET technology	METAL SEMICONDUCTOR
highest frequency band	X BAND
JESD-30 code	O-CRDB-F4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Polarity/channel type	N-CHANNEL
Minimum power gain (Gp)	6 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE
Base Number Matches	1

Preview

Download Datasheet

View All

2SK649X Related Products

	2SK649X	2SK1963	2SK1962	2SK1964
Description	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
package instruction	DISK BUTTON, O-CRDB-F4	DISK BUTTON, O-CRDB-F4	DISK BUTTON, O-CRDB-F4	DISK BUTTON, O-CRDB-F4
Reach Compliance Code	unknow	unknow	unknow	unknow
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	6 V	3.5 V	3.5 V	3.5 V
FET technology	METAL SEMICONDUCTOR	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY
highest frequency band	X BAND	X BAND	X BAND	X BAND
JESD-30 code	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4
Number of components	1	1	1	1
Number of terminals	4	4	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Minimum power gain (Gp)	6 dB	12 dB	12 dB	12 dB
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT	FLAT
Terminal location	RADIAL	RADIAL	RADIAL	RADIAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE
Base Number Matches	1	1	1	-

Recommended Resources

The structure of a typical pulse delay circuit

STK4101 II power amplifier circuit diagram

Two single-link switches control two lights

Charger-Pool Power supply circuite

DT810/CM2500/DT2500 type 3 1/2 digital multimeter circuit

455Hz oscillation circuit

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components