PDM44528S8J datasheet, PDF - EEWORLD Datasheet

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PDM44528S8J: DescriptionCache SRAM, 32KX18, 8ns, CMOS, PQCC52; Categorystorage storage; File Size495KB，11 Pages; ManufacturerParadigm Technology Inc

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PDM44528S8J Overview

Cache SRAM, 32KX18, 8ns, CMOS, PQCC52

PDM44528S8J Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Paradigm Technology Inc
package instruction	QCCJ, LDCC52,.8SQ
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	8 ns
Other features	BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE
I/O type	COMMON
JESD-30 code	S-PQCC-J52
JESD-609 code	e0
memory density	589824 bit
Memory IC Type	CACHE SRAM
memory width	18
Number of functions	1
Number of ports	1
Number of terminals	52
word count	32768 words
character code	32000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32KX18
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC52,.8SQ
Package shape	SQUARE
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3/5,5 V
Certification status	Not Qualified
Maximum standby current	0.13 A
Minimum standby current	4.75 V
Maximum slew rate	0.38 mA
Maximum supply voltage (Vsup)	5.25 V
Minimum supply voltage (Vsup)	4.75 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED

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Description	Cache SRAM, 32KX18, 8ns, CMOS, PQCC52	Cache SRAM, 32KX18, 12ns, CMOS, PQCC52	Cache SRAM, 32KX18, 12ns, CMOS, PQCC52	Cache SRAM, 32KX18, 14ns, CMOS, PQCC52	Cache SRAM, 32KX18, 14ns, CMOS, PQCC52	Cache SRAM, 32KX18, CMOS, PQCC52	Cache SRAM, 32KX18, 9ns, CMOS, PQCC52	Cache SRAM, 32KX18, 9ns, CMOS, PQCC52	Cache SRAM, 32KX18, 10ns, CMOS, PQCC52	Cache SRAM, 32KX18, 10ns, CMOS, PQCC52
package instruction	QCCJ, LDCC52,.8SQ	QCCJ, LDCC52,.8SQ	QCCJ, LDCC52,.8SQ	QCCJ, LDCC52,.8SQ	QCCJ, LDCC52,.8SQ	,	QCCJ, LDCC52,.8SQ	QCCJ, LDCC52,.8SQ	QCCJ, LDCC52,.8SQ	QCCJ, LDCC52,.8SQ
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
JESD-30 code	S-PQCC-J52	S-PQCC-J52	S-PQCC-J52	S-PQCC-J52	S-PQCC-J52	S-PQCC-J52	S-PQCC-J52	S-PQCC-J52	S-PQCC-J52	S-PQCC-J52
memory density	589824 bit	589824 bit	589824 bit	589824 bit	589824 bit	589824 bit	589824 bit	589824 bit	589824 bit	589824 bit
Memory IC Type	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
memory width	18	18	18	18	18	18	18	18	18	18
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1	1
Number of terminals	52	52	52	52	52	52	52	52	52	52
word count	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words
character code	32000	32000	32000	32000	32000	32000	32000	32000	32000	32000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	85 °C	70 °C	85 °C	85 °C	70 °C	85 °C	85 °C	70 °C
organize	32KX18	32KX18	32KX18	32KX18	32KX18	32KX18	32KX18	32KX18	32KX18	32KX18
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Exportable	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum supply voltage (Vsup)	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V
Minimum supply voltage (Vsup)	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL
Terminal form	J BEND	J BEND	J BEND	J BEND	J BEND	J BEND	J BEND	J BEND	J BEND	J BEND
Terminal location	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	-	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	-	incompatible	incompatible	incompatible	incompatible
Maker	Paradigm Technology Inc	-	-	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc
Maximum access time	8 ns	12 ns	12 ns	14 ns	14 ns	-	9 ns	9 ns	10 ns	10 ns
Other features	BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	-	BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	-	COMMON	COMMON	COMMON	COMMON
JESD-609 code	e0	e0	e0	e0	e0	-	e0	e0	e0	e0
encapsulated code	QCCJ	QCCJ	QCCJ	QCCJ	QCCJ	-	QCCJ	QCCJ	QCCJ	QCCJ
Encapsulate equivalent code	LDCC52,.8SQ	LDCC52,.8SQ	LDCC52,.8SQ	LDCC52,.8SQ	LDCC52,.8SQ	-	LDCC52,.8SQ	LDCC52,.8SQ	LDCC52,.8SQ	LDCC52,.8SQ
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	3.3/5,5 V	3.3/5,5 V	3.3/5,5 V	3.3/5,5 V	3.3/5,5 V	-	3.3/5,5 V	3.3/5,5 V	3.3/5,5 V	3.3/5,5 V
Minimum standby current	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	-	4.75 V	4.75 V	4.75 V	4.75 V
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	-	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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