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UZVP3306FTA

Description
Small Signal Field-Effect Transistor, 0.09A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size120KB,2 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric Compare View All

UZVP3306FTA Overview

Small Signal Field-Effect Transistor, 0.09A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

UZVP3306FTA Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.09 A
Maximum drain-source on-resistance14 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)8 pF
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON

UZVP3306FTA Related Products

UZVP3306FTA
Description Small Signal Field-Effect Transistor, 0.09A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Maker Diodes Incorporated
package instruction SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown
ECCN code EAR99
Configuration SINGLE
Minimum drain-source breakdown voltage 60 V
Maximum drain current (ID) 0.09 A
Maximum drain-source on-resistance 14 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 8 pF
JESD-30 code R-PDSO-G3
JESD-609 code e3
Humidity sensitivity level 1
Number of components 1
Number of terminals 3
Operating mode ENHANCEMENT MODE
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260
Polarity/channel type P-CHANNEL
Certification status Not Qualified
surface mount YES
Terminal surface MATTE TIN
Terminal form GULL WING
Terminal location DUAL
Maximum time at peak reflow temperature 40
Transistor component materials SILICON
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