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T649N10TOF

Description
Silicon Controlled Rectifier, 1300A I(T)RMS, 649000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element,
CategoryAnalog mixed-signal IC    Trigger device   
File Size62KB,1 Pages
ManufacturerEUPEC [eupec GmbH]
Download Datasheet Parametric View All

T649N10TOF Overview

Silicon Controlled Rectifier, 1300A I(T)RMS, 649000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element,

T649N10TOF Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
Objectid1413703898
Reach Compliance Codeunknown
compound_id293802939
Nominal circuit commutation break time250 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current250 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current300 mA
JESD-30 codeO-CEDB-N2
Maximum leakage current80 mA
On-state non-repetitive peak current11000 A
Number of components1
Number of terminals2
Maximum on-state current649000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current1300 A
Off-state repetitive peak voltage1000 V
Repeated peak reverse voltage1000 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Trigger device typeSCR
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