BC636 datasheet, PDF - EEWORLD Datasheet

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BC636: DescriptionBipolar transistor, 45V, 1A, 100MHZ, -55-150℃; CategoryDiscrete semiconductor Bipolar transistor; File Size790KB，2 Pages; ManufacturerLGE; Websitehttp://www.luguang.cn/web_en/index.html

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BC636 Overview

Bipolar transistor, 45V, 1A, 100MHZ, -55-150℃

BC636 Parametric

Parameter Name	Attribute value
polarity	PNP
Collector-emitter breakdown voltage	45
Collector Current - Continuous	1
DC current gain - Min	63
DC current gain - Max	250
Transition frequency	100
Package	TO-92
Storage Temperature Range	-55-150
class	Transistors

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BC636/BC638/BC640

Transistor(PNP)

1.

EMITTER

2.

COLLECTOR

3.

BASE

TO-92

Features

High current transistors

MAXIMUM RATINGS (T

A

=25℃ unless otherwise noted)

Symbol

V

CBO

Parameter

Collector-Base Voltage

BC636

BC638

BC640

V

CEO

Collector-Emitter Voltage

BC636

BC638

BC640

V

EBO

I

C

P

C

R

ӨJA

T

j

T

stg

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Thermal Resistance, junction to Ambient

Value

-45

-60

-100

-45

-60

-80

-5

-1

0.83

150

-55-150

Units

V

Dimensions in inches and (millimeters)

V

A

W

℃/W

℃

Junction Temperature

Storage Temperature

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

BC636

BC638

BC640

I

C

=-1mA,I

B

=0

Collector-emitter breakdown voltage

V

(BR)CEO

BC636

BC638

BC640

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

V

(BR)EBO

I

CBO

I

EBO

h

FE(1)

h

FE(2)

h

FE(3)

V

CE(sat)

V

BE

f

T

I

E

=-100μA,I

C

=0

V

CB

=-30V,I

E

=0

V

EB

= -5V,I

C

=0

V

CE

= -2V,I

C

=- 5mA

V

CE

= -2V,I

C

=- 150mA

V

CE

= -2V,I

C

=- 500mA

I

C

=- 500mA,I

B

= -50mA

V

CE

= -2V,I

C

= -500mA

V

CE

= -5V,I

C

=- 50mA,f=100MHz

100

40

63

25

-0.5

-1

V

MHz

250

MIN

-45

-60

-100

-45

-60

-80

-5

-0.1

- 0.1

V

μA

V

TYP

MAX

UNIT

I

C

=-100μA,I

E

=0

Collector-base breakdown voltage

V

(BR)CBO

CLASSIFICATION OF

Rank

Range

h

FE(2)

BC636-10

63-160

BC636-16, BC638-16, BC640-16

100-250

Revision:20170701-P1

ht

t

p

:

//

www.lgesem i

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mail:lge@lgesemi.com

BC636 Related Products

	BC636	BC638	BC640
Description	Bipolar transistor, 45V, 1A, 100MHZ, -55-150℃	Bipolar transistor, 80V, 1A, 100MHZ, -55-150℃	Bipolar transistor, 80V, 1A, 100MHZ, -55-150℃
polarity	PNP	PNP	PNP
Collector-emitter breakdown voltage	45	80	80
Collector Current - Continuous	1	1	1
DC current gain - Min	63	63	63
DC current gain - Max	250	250	250
Transition frequency	100	100	100
Package	TO-92	TO-92	TO-92
Storage Temperature Range	-55-150	-55-150	-55-150
class	Transistors	Transistors	Transistors

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