CQY80X, CQY80NX
CQY80, CQY80N
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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CQY80X is VDE 0884 in 3 available
lead forms : -
- STD
-
G form
-
SMD approved to CECC 00802
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2.54
7.0
6.0
1.2
7.62
6.62
Dimensions in mm
1
2
3
6
5
4
7.62
4.0
3.0
0.5
13°
Max
0.26
CQY80NX - VDE 0884 pending
CQY80X is certified to EN60950 by the
following Test Bodies :-
3.0
Nemko - Certificate No. P96101299
Fimko - Registration No. 190469-01..22
Semko - Reference No. 9620076 01
Demko - Reference No. 305567
CQY80NX - EN60950 pending
DESCRIPTION
The CQY80 series of optically coupled
isolators consist of infrared light emitting diode
and NPN silicon photo transistor in a standard
6 pin dual in line plastic package.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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Custom electrical selections available
APPLICATIONS
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DC motor controllers
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Industrial systems controllers
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Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
0.5
3.35
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Collector-base Voltage BV
CBO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
32V
70V
6V
160mW
60mA
6V
105mW
7.62
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB90035m-AAS/A1
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Voltage (V
R
)
Reverse Current (I
R
)
Collector-emitter Breakdown (BV
CEO
)
( Note 2 )
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
I
C
/ I
F
(CTR) (Note 2)
Current Transfer Ratio (CTR) (Note 2)
Collector-emitter Saturation VoltageV
CE(SAT)
Input to Output Isolation Voltage V
ISO
5300
7500
MIN TYP MAX UNITS
1.2
6
10
32
6
200
0.5
50
0.3
%
V
1.60
V
V
µ
A
V
V
nA
TEST CONDITION
I
F
= 50mA
I
R
= 10
µ
A
V
R
= 6V
I
C
= 1mA
I
E
= 100
µ
A
V
CE
= 20V
10mA I
F
, 5V V
CE
10mA I
F
, 5V V
CE
10mA I
F
, 1mA I
C
See note 1
See note 1
Output
Coupled
V
RMS
V
PK
Ω
Input-output Isolation Resistance R
ISO
5x10
10
V
IO
= 500V (note 1)
Note 1
Note 2
Type
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
R
L
= 100
Ω
see fig 1
td
tr
ton
ts
µ
s
µ
s
µ
s
µ
s
4.0
7.0
11.0
0.3
R
L
= 1k
Ω
see fig 2
ton
toff I
F
µ
s
µ
s
mA
25.0
42.5
10
tf
µ
s
6.7
toff
µ
s
7.0
I
C
mA
5
CQY80
CQY80N
V
CC
= 5V
V
CC
= 5V
Output
50Ω
R
L
= 100Ω
50Ω
Output
R
L
= 1kΩ
Figure 1
Figure 2
7/12/00
DB90035m-AAS/A1
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Collector Current vs. Collector-emitter Voltage
50
T
A
= 25°C
150
Collector current I
C
(mA)
40
30
20
10
50
30
20
15
10
100
50
I
F
= 5mA
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
80
Current transfer ratio CTR (%)
70
0
0
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Current Transfer Ratio vs. Forward Current
320
280
240
200
160
120
80
40
0
-30
0
25
50
75
100
125
1
2
5
10
20
50
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
Forward current I
F
(mA)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
DB90035m-AAS/A1
V
CE
= 5V
T
A
= 25°C
Forward current I
F
(mA)
60
50
40
30
20
10
0
1.0
0.5
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
7/12/00
Collector-emitter saturation voltage V
Relative current transfer ratio
I
F
= 10mA
V
CE
= 5V
CE(SAT)
(V)
I
F
= 10mA
I
C
= 1mA
Embedded System
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