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2N6593

Description
TRANSISTOR,BJT,NPN,250V V(BR)CEO,500MA I(C),TO-202VAR
CategoryDiscrete semiconductor    The transistor   
File Size35KB,1 Pages
ManufacturerNational Semiconductor(TI )
Websitehttp://www.ti.com
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2N6593 Overview

TRANSISTOR,BJT,NPN,250V V(BR)CEO,500MA I(C),TO-202VAR

2N6593 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codecompli
Maximum collector current (IC)0.5 A
ConfigurationSingle
Minimum DC current gain (hFE)30
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)2 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)70 MHz
Base Number Matches1

2N6593 Related Products

2N6593 2N5148 2N2891 2N6592 2N5150
Description TRANSISTOR,BJT,NPN,250V V(BR)CEO,500MA I(C),TO-202VAR TRANSISTOR,BJT,NPN,80V V(BR)CEO,2A I(C),TO-39 TRANSISTOR NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39, TO-39, 3 PIN, BIP General Purpose Small Signal TRANSISTOR,BJT,NPN,200V V(BR)CEO,500MA I(C),TO-202AC TRANSISTOR,BJT,NPN,80V V(BR)CEO,2A I(C),TO-39
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code compli compli unknow compli compli
Configuration Single Single SINGLE Single Single
Minimum DC current gain (hFE) 30 30 40 40 70
JESD-609 code e0 e0 e0 e0 e0
Maximum operating temperature 150 °C 175 °C 175 °C 150 °C 175 °C
Polarity/channel type NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 2 W 1 W 0.8 W 2 W 1 W
surface mount NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 70 MHz 50 MHz 30 MHz 70 MHz 60 MHz
Maximum collector current (IC) 0.5 A 2 A - 0.5 A 2 A
Base Number Matches 1 1 1 1 -

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