CHR3693-99F
RoHS COMPLIANT
21-26.5GHz Integrated Down converter
GaAs Monolithic Microwave IC
Description
The CHR3693-99F is a multifunction chip,
which integrates a balanced cold FET mixer,
a time two multiplier, and a RF self biased
LNA.
It is designed for a wide range of
applications,
typically
commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
I
LO
Vgx
X2
Q
Vdx
Vgm
Vdl
RF
Main Features
■ Broadband performance 21-26.5GHz
■ 18dB gain
■ -7dBm input IP3
■ 18dBc image rejection
■ DC bias: Vd=4.0Volt@Id=160mA
■ Chip size: 2,45 x 2,45 x 0,1mm
Main Electrical Characteristics
Tamb.= +25°C, Vdx=Vdl = +4.0V, Vgx=-0.9V, Vgm=-0.7V
Symbol
Parameter
Min
Typ
Max
Unit
F_RF
RF frequency range
21
26.5
GHz
F_LO
LO frequency range
9
14
GHz
F_IF
IF frequency range
DC
3.5
GHz
Gc
Conversion gain
11
15
dB
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHR36931192 - 11 Jul 11
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHR3693-99F
Electrical Characteristics
21-26.5GHz Integrated Down
converter
Tamb.= +25°C, Vdx=Vdl = +4.0V, Vgx=-0.9V, Vgm=-0.7V
Symbol
Parameter
Min
Typ
Max
Unit
F_RF
RF frequency range
21
26.5
GHz
F_LO
LO frequency range
9
14
GHz
F_IF
IF frequency range
DC
3.5
GHz
Gc
Conversion gain
11
15
19
dB
NF
Noise Figure for IF>0.1GHz
3.2
3.7
dB
P_LO
LO Input power
2
5
dBm
(2)
Img Sup Image Suppression
15
18
dBc
IIP3
Input IP3
-7
dBm
LO_RL
LO return loss
-9.5
-7
dB
RF return loss (21 to 24GHz)
-9.5
-7
dB
RF_RL
RF return loss (24 to 26.5GHz)
-8
-6
dB
Id
Bias current
(1)
(Idl + Idx)
120
160
200
mA
(1)
Typically, Idl= 90mA, Idx=70mA
(2)
With external I/Q 90° hybrid coupler
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports. A bonding wire of typically 0.1 to 0.15nH will improve the matching at
the accesses.
Absolute Maximum Ratings
(1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd
Maximum drain bias voltage
4.5
V
Id
Maximum drain bias current
230
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
P_RF
Maximum RF input power
(2)
10
dBm
P_LO
Maximum LO input power
(2)
10
dBm
Tch
Maximum channel temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +150
°C
(1)
Operation of this device above anyone of these parameters may cause permanent
damage.
(2)
Duration < 1s.
Ref. : DSCHR36931192 - 11 Jul 11
2/8
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
21-26.5GHz Integrated Down
converter
Typical on wafer Measurements
Tamb=25°C, Vdx=Vdl=4V, Typical Vgx=-0.9V & Vgm=-0.7V
CHR3693-99F
Ref. : DSCHR36931192 - 11 Jul 11
3/8
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHR3693-99F
Typical on wafer Measurements
21-26.5GHz Integrated Down
converter
Tamb=25°C, Vdx=Vdl=4V, Typical Vgx=-0.9V & Vgm=-0.7V
Ref. : DSCHR36931192 - 11 Jul 11
4/8
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
21-26.5GHz Integrated Down
converter
Mechanical data
Bonding pad positions
CHR3693-99F
Chip thickness: 100µm.
Chip size: 2450x2450 ±35µm
All dimensions are in micrometers
Supply feed should be capacitively bypassed.
25µm diameter gold wire is recommended.
Ref. : DSCHR36931192 - 11 Jul 11
5/8
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
京公网安备 11010802033920号
EEWORLD
