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P202PH10EH0

Description
Silicon Controlled Rectifier, 355000mA I(T), 1000V V(DRM)
CategoryAnalog mixed-signal IC    Trigger device   
File Size208KB,2 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

P202PH10EH0 Overview

Silicon Controlled Rectifier, 355000mA I(T), 1000V V(DRM)

P202PH10EH0 Parametric

Parameter NameAttribute value
MakerIXYS
Reach Compliance Codeunknown
ECCN codeEAR99
Nominal circuit commutation break time30 µs
Critical rise rate of minimum off-state voltage100 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current600 mA
Maximum leakage current30 mA
On-state non-repetitive peak current3200 A
Maximum on-state current355000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage1000 V
surface mountNO
Trigger device typeSCR
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