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RJP60V0DPM-80T2

Description
600V - 22A - IGBT Application: Inverter
File Size109KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RJP60V0DPM-80T2 Overview

600V - 22A - IGBT Application: Inverter

Preliminary
Datasheet
RJP60V0DPM-80
600V - 22A - IGBT
Application: Inverter
Features
High breakdown-voltage
Low collector to emitter saturation voltage
V
CE(sat)
= 1.5 V typ. (at I
C
= 22 A, V
GE
= 15 V, Ta = 25°C)
Short circuit withstand time (6
s
typ.)
Trench gate and thin wafer technology (G6H series)
R07DS1036EJ0100
Rev.1.00
Mar 01, 2013
Outline
RENESAS Package code: PRSS0003ZD-A
(Package name: TO-3PF)
C
G
1. Gate
2. Collector
3. Emitter
E
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
I
C(peak) Note1
P
C Note2
Note2
j-c
Tj
Tstg
Ratings
600
±30
45
22
90
60
2.08
150
–55 to +150
Unit
V
V
A
A
A
W
°C/ W
°C
°C
R07DS1036EJ0100 Rev.1.00
Mar 01, 2013
Page 1 of 7

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