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DB107

Description
1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size397KB,2 Pages
ManufacturerYEA SHIN TECHNOLOGY CO.,LTD
Websitehttp://www.yeashin.com/
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DB107 Overview

1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

DB107 Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Minimum breakdown voltage1000 V
Maximum average input current1 A
Processing package descriptionROHS COMPLIANT, PLASTIC, DB-1, 4 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeIN-line
Terminal formTHROUGH-hole
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage1000 V
Maximum non-repetitive peak forward current40 A
DATA SHEET
SEMICONDUCTOR
DB101 THRU DB107
SINGLE PHASE 1.0 AMP BRIDGE RECTIFIERS
VOLTAGE RANGE 50 to 1000 Volts
CURRENT 1.0 Ampere
Glass passivated type
FEATURES
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique
High surge current capability
Polarity: marked on body
Mounting position: Any
Weight:
0.412
grams
High temperature soldering : 260
O
C / 10 seconds at terminals
Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
.045(1.14)
.035(0.89)
.020
0.5
.135(3.4)
.115(2.9)
DIP
Unit:inch(mm)
.255(6.5)
.245(6.2)
.335(8.51)
.320(8.12)
.060
(15)
.205(5.2)
.195(5.0)
.165(4.2)
.155(3.9)
.013(0.33)
.0088(0.22)
.350(8.9)
.300(7.6)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=40 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Forward Voltage Drop per Bridge Element at 1.0A
D.C.
Maximum DC Reverse Current Ta=25 C
at Rated DC Blocking Voltage Ta=125 C
Operating Temperature Range, TJ
Storage Temperature Range, TSTG
DB101
50
35
50
DB102
100
70
100
DB103
200
140
200
DB104
400
280
400
1.0
50
1.1
10
500
DB105
600
420
600
DB106
800
560
800
DB107 UNITS
1000
700
1000
V
V
V
A
A
V
UA
uA
-55 to + 150
-55 to + 150
http://www.yeashin.com
1
REV.02 20120305

DB107 Related Products

DB107 DB101 DB102 DB103 DB104 DB105 DB106
Description 1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE

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