ZVN2106E datasheet, PDF - EEWORLD Datasheet

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ZVN2106E: Description0.45A, 60V, 2ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DIP-14; CategoryDiscrete semiconductor The transistor; File Size28KB，1 Pages; ManufacturerDiodes Incorporated

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ZVN2106E Overview

0.45A, 60V, 2ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DIP-14

ZVN2106E Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Diodes Incorporated
Objectid	1407998967
Parts packaging code	DIP
package instruction	IN-LINE, R-PDIP-T14
Contacts	14
Reach Compliance Code	unknown
ECCN code	EAR99
compound_id	163137582
Configuration	SEPARATE, 4 ELEMENTS
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	0.45 A
Maximum drain current (ID)	0.45 A
Maximum drain-source on-resistance	2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDIP-T14
JESD-609 code	e0
Number of components	4
Number of terminals	14
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	235
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.85 W
Maximum pulsed drain current (IDM)	3 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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ZVN2106E Related Products

	ZVN2106E	ZVN3306E	ZVN4206E
Description	0.45A, 60V, 2ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DIP-14	0.27A, 60V, 5ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DIP-14	0.6A, 60V, 1.5ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DIP-14
Is it lead-free?	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Parts packaging code	DIP	DIP	DIP
package instruction	IN-LINE, R-PDIP-T14	IN-LINE, R-PDIP-T14	IN-LINE, R-PDIP-T14
Contacts	14	14	14
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Configuration	SEPARATE, 4 ELEMENTS	SEPARATE, 4 ELEMENTS	SEPARATE, 4 ELEMENTS
Minimum drain-source breakdown voltage	60 V	60 V	60 V
Maximum drain current (Abs) (ID)	0.45 A	0.85 A	0.5 A
Maximum drain current (ID)	0.45 A	0.27 A	0.6 A
Maximum drain-source on-resistance	2 Ω	5 Ω	1.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDIP-T14	R-PDIP-T14	R-PDIP-T14
JESD-609 code	e0	e0	e0
Number of components	4	4	4
Number of terminals	14	14	14
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	235	235	235
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.85 W	0.85 W	0.52 W
Maximum pulsed drain current (IDM)	3 A	3 A	3 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Maximum operating temperature	150 °C	150 °C	-

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