DATA SHEET
SEMICONDUCTOR
DB151S THRU DB157S
SINGLE-PHASE GLASS PASSIVATED
VOLTAGE RANGE 50 to 1000
Volts CURRENT 1.5 Ampere
FEATURES
•Surge
overload rating - 60 amperes peak
•Ideal
for printed circuit board
•Reliable
low cost construction utilizing molded
•Glass
passivated device
•Polarity
symbols molded on body
•Mounting
position: Any
•Weight:
1.0 gram
•High
temperature soldering : 260
O
C / 10 seconds at terminals
•Pb
free product at available : 99% Sn above meet RoHS
environment substance directive request
SDIP
Unit : inch (mm)
+
.255(6.5)
.245(6.2)
~
~
.011(.28)
.410(10.4)
MAX
.060(1.524)
.040(1.106)
.128(3.25)
.102
(2.60)
.045(1.14)
.035(0.89)
.335(8.51)
.335(8.05)
MECHANICAL DATA
•Epoxy
: Device has UL flammability classification 94V-0
•UL
listed the recognized component directory, file #E94233
.205(5.2)
.195(5.0)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
•Ratings
at 25 oC ambient temperature unless otherwise specified.
•Single
phase, half wave, 60 Hz, resistive or inductive load.
•For
capacitive load, derate current by 20%.
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at TA = 40
℃
Peak Forward Surge Current 8.3 ms single half
sine-wave
superimposed on rated load (JEDEC method)
Typical thermal resistance
SYMBOL DB151S DB152S DB153S DB154S DB155S DB156S DB157S UNITS
VRRM
VRMS
VDC
IO
50
35
50
100
70
100
200
140
200
400
280
400
1.5
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
IFSM
RqJA
RqJL
TJ,TSTG
60
40
15
-55 to + 150
Amps
℃/W
℃
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per Bridge
Element at 1.0A DC
Maximum Forward Voltage Drop per
Bridge
DC Blocking Voltage per element
NOTE: Suffix “-s” Surface Mount for Dip Bridge.
@TA = 25℃
@TA = 125℃
IR
SYMBOL DB151S DB152S DB153S DB154S DB155S DB156S DB157S
VF
1.1
5.0
0.5
UNITS
Volts
uAmps
uAmps
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REV.03 20130115
DEVICE CHARACTERISTICS
DB151S THRU DB157S
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
3.0
2.5
INSTANTANEOUS FWD CUTTENT,
AMPERES
T
J
=25
O
C
Pulse Width = 200uS
2.0
1.5
1.0
0.5
0
0
50
100
O
150
AMBIENT TEMPERATURE, C
INSTANTANEOUS FWD VOLTAGE, VOLTS
FIG.1 DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT,uA
T
A
= 100 C
1.0
O
FORWARD SURGE CURRENT, AMPERES
(HALF SINE-WAVE)
10
50
40
30
20
0.1
T
A
= 25
O
C
10
0.01
0
20
40
60
80
100
120
140
0
1
2
6
10
20
40
60
100
PERCENT OF PEAK REVERSE VOLTAGE, %
NO. OF CYCLES AT 60Hz
FIG.3 TYPICAL REVERSE CHARACTERISTICS
FIG.4 MAX NON-REPETITIVE SURGE CURRENT
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REV.03 20130115
Embedded System
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