ZT91-QR-B datasheet, PDF - EEWORLD Datasheet

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ZT91-QR-B: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size47KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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ZT91-QR-B Overview

Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, TO-39, 3 PIN

ZT91-QR-B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	TT Electronics plc
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-205AD
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

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ZT91

MECHANICAL DATA

Dimensions in mm (inches)

8.51 (0.34)

9.40 (0.37)

MEDIUM POWER SILICON

NPN PLANAR TRANSISTOR

7.75 (0.305)

8.51 (0.335)

6.10 (0.240)

6.60 (0.260)

General purpose NPN Transistor

in a hermetic TO39 package.

0.89

max.

(0.035)

0.41 (0.016)

0.53 (0.021)

dia.

12.70

(0.500)

min.

CEO

= 100V

5.08 (0.200)

typ.

= 1A

2.54

(0.100)

0.74 (0.029)

1.14 (0.045)

0.71 (0.028)

0.86 (0.034)

TOT

= 5W

45°

TO39 PACKAGE (TO-205AD)

Underside View

Pin 1 = Emitter

Pin 2 = Base Pin 3 = Collector

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

CBO

CEO

EBO

CER

TOT

Collector

–

Base Voltage

Collector

–

Emitter Voltage

Emitter

–

Base Voltage

Collector

–

Emitter Sustaining Voltage

Collector Current

Dissipation @ T

amb

= 25°C

@ Case Temp. = 100°C

@ Case Temp. = 25°C

Derating linearly

Storage and Operatuing Junction Temperature

120V

100V

2.9W

175°C/W

–65 to 175°C

stg,

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Document Number 3032

Issue 1

ZT91-QR-B Related Products

	ZT91-QR-B	ZT91E4	ZT91-QR
Description	Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, TO-39, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, TO-39, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, TO-39, 3 PIN
Is it Rohs certified?	incompatible	conform to	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A	1 A
Collector-emitter maximum voltage	100 V	100 V	100 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40	40
JEDEC-95 code	TO-205AD	TO-205AD	TO-205AD
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	175 °C	175 °C	175 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz
Maker	TT Electronics plc	-	TT Electronics plc

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