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BSR30T/R

Description
TRANSISTOR 1 A, 60 V, PNP, Si, POWER TRANSISTOR, PLASTIC, MPT3, SMD, UPAK-3, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size56KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BSR30T/R Overview

TRANSISTOR 1 A, 60 V, PNP, Si, POWER TRANSISTOR, PLASTIC, MPT3, SMD, UPAK-3, BIP General Purpose Power

BSR30T/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BSR30; BSR31; BSR33
PNP medium power transistors
Product data sheet
Supersedes data of 1999 Apr 26
2004 Dec 13

BSR30T/R Related Products

BSR30T/R BSR33T/R BSR31T/R
Description TRANSISTOR 1 A, 60 V, PNP, Si, POWER TRANSISTOR, PLASTIC, MPT3, SMD, UPAK-3, BIP General Purpose Power TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, PLASTIC, MPT3, SMD, UPAK-3, BIP General Purpose Power TRANSISTOR 1 A, 60 V, PNP, Si, POWER TRANSISTOR, PLASTIC, MPT3, SMD, UPAK-3, BIP General Purpose Power
Is it Rohs certified? conform to conform to conform to
Maker NXP NXP NXP
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 1 A 1 A 1 A
Collector-emitter maximum voltage 60 V 80 V 60 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 30 50 50
JESD-30 code R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
JESD-609 code e3 e3 e3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 1 W 1 W 1 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form FLAT FLAT FLAT
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz
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