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RD7.5EB

Description
Zener Diode, 7.26V V(Z), 5.23%, 0.5W, Silicon, Unidirectional, DO-35, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size142KB,9 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

RD7.5EB Overview

Zener Diode, 7.26V V(Z), 5.23%, 0.5W, Silicon, Unidirectional, DO-35, GLASS PACKAGE-2

RD7.5EB Parametric

Parameter NameAttribute value
MakerNEC Electronics
package instructionGLASS PACKAGE-2
Reach Compliance Codeunknown
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
Maximum knee impedance150 Ω
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage7.26 V
Maximum reverse current2 µA
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum voltage tolerance5.23%
Working test current20 mA
DATA SHEET
RD2.0E to RD120E
500 mW PLANAR TYPE SILICON ZENER DIODES
ZENER DIODES
DESCRIPTION
These products are zener diodes with an allowable
dissipation of 500 mW and a planar type glass sealed DHD
(double heatsink diode) structure.
PACKAGE DRAWING (Unit: mm)
φ
0.5
25 MIN.
Cathode
indication
• The zener voltage series has a wide voltage range of 2 to
120 V and is ideal for standardization.
• The E24 series is employed for the zener voltage nominal
value.
φ
2.0 MAX.
25 MIN.
ORDERING INFORMATION
Any of the B1 to B7 voltage classifications are available for
customers who request the B grade product of the RD2.0E to
RD39E.
Marking color: Black
JEDEC: DO-35
APPLICATIONS
• Zener voltage and constant-current circuit
• Waveform clipper circuit and limiter circuit
• Surge absorption circuit
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Parameter
Power dissipation
Junction temperature
Forward current
Storage temperature
Surge reverse power
P
T
i
I
F
T
stg
P
RSM
Symbol
Ratings
500
175
200
−65
to +175
100 (t = 100
µ
s)
Unit
mW
°C
mA
°C
W
Refer to Figure 6.
Remarks
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D10211EJ6V1DS00 (6th edition)
Date Published December 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
4.2 MAX.
FEATURES
2002

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