Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
6.0
0.2
MAX.
1500
800
10
25
45
5.0
-
0.35
UNIT
V
V
A
A
W
V
A
µs
T
hs
≤
25 ˚C
I
C
= 6.0 A; I
B
= 1.2 A
I
Csat
= 6.0 A; I
B(end)
= 0.85 A
PINNING - SOT199
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
1
2
3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
800
10
25
6
9
150
6
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
average over any 20 ms period
T
hs
≤
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
1
Turn-off current.
September 1997
1
Rev 1.500
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
I
EBO
BV
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
PARAMETER
Collector cut-off current
2
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
V
EB
= 7.5 V; I
C
= 0 A
I
B
= 1 mA
I
B
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 6.0 A; I
B
= 1.2 A
I
C
= 6.0 A; I
B
= 1.2 A
I
C
= 100 mA; V
CE
= 5 V
I
C
= 6 A; V
CE
= 5 V
MIN.
-
-
-
7.5
800
-
-
-
5
TYP.
-
-
-
13.5
-
-
-
13
7
MAX.
1.0
2.0
1.0
-
-
5.0
1.1
-
9.5
UNIT
mA
mA
mA
V
V
V
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
C
c
PARAMETER
Collector capacitance
Switching times (32 kHz line
deflection circuit)
t
s
t
f
Turn-off storage time
Turn-off fall time
Switching times (16 kHz line
deflection circuit)
t
s
t
f
Turn-off storage time
Turn-off fall time
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
Csat
= 6.0 A; L
C
= 330
µH;
C
fb
= 9 nF;
I
B(end)
= 0.85 A; L
B
= 3.45
µH;
-V
BB
= 4 V; (-dI
B
/dt = 1.2 A /
µs)
I
Csat
= 6.0 A; L
C
= 650
µH;
C
fb
= 19 nF;
I
B(end)
= 1.0 A; L
B
= 5.3
µH;
-V
BB
= 4 V;
(-dI
B
/dt = 0.8 A /
µs)
4.5
0.35
5.5
0.5
µs
µs
TYP.
115
MAX.
-
UNIT
pF
3.0
0.2
4.0
0.35
µs
µs
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.500
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AF
+ 50v
100-200R
IC
TRANSISTOR
DIODE
ICsat
t
IB
IBend
t
Horizontal
Oscilloscope
Vertical
32us
10us
13us
100R
6V
30-60 Hz
1R
VCE
t
Fig.1. Test circuit for V
CEOsust
.
Fig.4. Switching times waveforms (32 kHz).
IC / mA
ICsat
90 %
IC
250
10 %
200
ts
IB
tf
t
100
IBend
t
0
VCE / V
min
VCEOsust
- IBM
Fig.2. Oscilloscope display for V
CEOsust
.
Fig.5. Switching times definitions.
TRANSISTOR
IC
DIODE
ICsat
+ 150 v nominal
adjust for ICsat
t
Lc
IB
IBend
t
20us
26us
IBend
64us
VCE
LB
T.U.T.
Cfb
-VBB
t
Fig.3. Switching times waveforms (16 kHz).
Fig.6. Switching times test circuit.
September 1997
3
Rev 1.500
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AF
100
hFE
Tj = 25 C
1.2
1.1
1
VBESAT / V
Tj = 25 C
5V
Tj = 125 C
Tj = 125 C
10
1V
0.9
IC=
0.8
0.7
8A
6A
5A
4A
0
1
2
IB / A
3
4
1
0.6
0.1
1
IC / A
10
100
Fig.7. Typical DC current gain. h
FE
= f (I
C
)
parameter V
CE
VBESAT / V
Tj = 25 C
Tj = 125 C
Fig.10. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
VCESAT / V
Tj = 25 C
Tj = 125 C
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
10
8A
1
IC/IB=
3
4
5
0.1
5A
IC = 4 A
6A
0.1
1
IC / A
10
0.1
1
IB / A
10
Fig.8. Typical base-emitter saturation voltage.
V
BE
sat = f (I
C
); parameter I
C
/I
B
VCESAT / V
IC/IB =
5
4
3
Fig.11. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
B
); parameter I
C
Eoff / uJ
1
0.9
0.8
0.7
0.6
0.5
1000
IC = 6 A
32 kHz
5A
100
16 kHz
Tj = 25 C
0.4
0.3
0.2
0.1
0
0.1
Tj = 125 C
10
1
IC / A
10
100
0.1
1
IB / A
10
Fig.9. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.12. Typical turn-off losses. T
j
= 85˚C
Eoff = f (I
B
); parameter I
C
; parameter frequency
September 1997
4
Rev 1.500
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AF
12
11
10
9
8
7
6
5
4
3
2
1
0
ts, tf / us
16 kHz
ts
120
110
100
90
80
70
60
PD%
Normalised Power Derating
with heatsink compound
IC =
6A
5A
tf
0.1
1
IB / A
10
50
40
30
20
10
0
0
20
40
60
80
Ths / C
100
120
140
Fig.13. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); parameter I
C
; T
j
= 85˚C; f = 16 kHz
ts, tf / us
32 kHz
Fig.15. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25˚C
= f (T
hs
)
Zth / (K/W)
12
11
10
9
8
7
6
5
4
3
2
1
0
10
1
0.5
0.2
0.1
0.05
0.02
ts
0.1
IC =
6A
5A
tf
10
0.01
P
D
t
p
D=
t
p
T
t
0.1
1
IB / A
D=0
0.001
1E-06
T
1E-04
1E-02
t/s
1E+00
Fig.14. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); parameter I
C
; T
j
= 85˚C; f = 32 kHz
Fig.16. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
September 1997
5
Rev 1.500
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