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BU2520AX

Description
Bipolar Transistors;NPN;10A;800V;TO-3PHIS
CategoryDiscrete semiconductor   
File Size217KB,2 Pages
ManufacturerInchange Semiconductor
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BU2520AX Overview

Bipolar Transistors;NPN;10A;800V;TO-3PHIS

isc
Silicon NPN Power Transistor
BU2520AX
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 800V (Min)
·High
Switching Speed
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for use in horizontal deflection circuits of
large screen color TV receivers
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
J
T
stg
PARAMETER
Collector- Emitter Voltage(V
BE
= 0)
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current- Continuous
Collector Current-Peak
Base Current- Continuous
Base Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1500
800
7.5
10
25
6
9
45
150
-55~150
UNIT
V
V
V
A
A
A
A
W
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
2.8
UNIT
℃/W
isc website
www.iscsemi.com
1
isc & iscsemi
is registered trademark
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