BYD71GAMO datasheet, PDF - EEWORLD Datasheet

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BYD71GAMO: DescriptionDIODE 0.41 A, 400 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode; CategoryDiscrete semiconductor diode; File Size208KB，11 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BYD71GAMO Overview

DIODE 0.41 A, 400 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode

BYD71GAMO Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	HERMETIC SEALED, GLASS PACKAGE-2
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.9 V
JESD-30 code	O-LALF-W2
Maximum non-repetitive peak forward current	7 A
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	0.41 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	400 V
Maximum reverse recovery time	0.05 µs
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL

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Description	DIODE 0.41 A, 400 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode	DIODE 0.41 A, 400 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode	DIODE 0.43 A, 50 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode	DIODE 0.41 A, 250 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode	DIODE 0.41 A, 300 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode	0.41A, 400V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2	DIODE 0.43 A, 100 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode	0.43A, 200V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2
package instruction	HERMETIC SEALED, GLASS PACKAGE-2	HERMETIC SEALED, GLASS PACKAGE-2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Contacts	2	2	2	2	2	2	2	2
Reach Compliance Code	compliant	compliant	unknown	unknown	unknown	unknown	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Number of components	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	0.41 A	0.41 A	0.43 A	0.41 A	0.41 A	0.41 A	0.43 A	0.43 A
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	400 V	400 V	50 V	250 V	300 V	400 V	100 V	200 V
Maximum reverse recovery time	0.05 µs	0.05 µs	0.025 µs	0.05 µs	0.05 µs	0.05 µs	0.025 µs	0.025 µs
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
technology	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maker	NXP	-	NXP	NXP	NXP	NXP	NXP	NXP

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