BYD73G datasheet, PDF - EEWORLD Datasheet

BYD73G: Description0.95A, 400V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2; CategoryDiscrete semiconductor diode; File Size69KB，11 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BYD73G Overview

0.95A, 400V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	NXP
package instruction	O-LALF-W2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW LEAKAGE CURRENT
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.83 V
JESD-30 code	O-LALF-W2
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	25 A
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	0.95 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	225
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	400 V
Maximum reverse recovery time	0.05 µs
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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DATA SHEET

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M3D119

BYD73 series

Ultra fast low-loss

controlled avalanche rectifiers

Product speciﬁcation

Supersedes data of 1996 May 24

1996 Sep 18

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