DIODE 0.95 A, 250 V, SILICON, SIGNAL DIODE, Signal Diode
| Parameter Name | Attribute value |
| Maker | NXP |
| package instruction | O-LALF-W2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| JESD-30 code | O-LALF-W2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Minimum operating temperature | -65 °C |
| Maximum output current | 0.95 A |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 250 V |
| Maximum reverse recovery time | 0.05 µs |
| surface mount | NO |
| technology | AVALANCHE |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| BYD73E113 | BYD73E133 | BYD73G143 | BYD73A143 | BYD73C143 | BYD73D143 | BYD73F143 | BYD73F113 | BYD73B143 | BYD73F133 | |
|---|---|---|---|---|---|---|---|---|---|---|
| Description | DIODE 0.95 A, 250 V, SILICON, SIGNAL DIODE, Signal Diode | DIODE 0.95 A, 250 V, SILICON, SIGNAL DIODE, Signal Diode | DIODE 0.95 A, 400 V, SILICON, SIGNAL DIODE, Signal Diode | DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, Signal Diode | DIODE 1 A, 150 V, SILICON, SIGNAL DIODE, Signal Diode | DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, Signal Diode | DIODE 0.95 A, 300 V, SILICON, SIGNAL DIODE, Signal Diode | DIODE 0.95 A, 300 V, SILICON, SIGNAL DIODE, Signal Diode | DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, Signal Diode | DIODE 0.95 A, 300 V, SILICON, SIGNAL DIODE, Signal Diode |
| package instruction | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
| Reach Compliance Code | unknown | unknow | unknown | unknown | unknown | unknown | unknown | unknown | unknow | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
| JESD-30 code | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Minimum operating temperature | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C |
| Maximum output current | 0.95 A | 0.95 A | 0.95 A | 1 A | 1 A | 1 A | 0.95 A | 0.95 A | 1 A | 0.95 A |
| Package body material | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum repetitive peak reverse voltage | 250 V | 250 V | 400 V | 50 V | 150 V | 200 V | 300 V | 300 V | 100 V | 300 V |
| Maximum reverse recovery time | 0.05 µs | 0.05 µs | 0.05 µs | 0.025 µs | 0.025 µs | 0.025 µs | 0.05 µs | 0.05 µs | 0.025 µs | 0.05 µs |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| technology | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
| Maker | NXP | - | - | - | - | NXP | NXP | NXP | NXP | NXP |