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BYV26F133

Description
DIODE 1.05 A, 1200 V, SILICON, RECTIFIER DIODE, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size302KB,10 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BYV26F133 Overview

DIODE 1.05 A, 1200 V, SILICON, RECTIFIER DIODE, Rectifier Diode

BYV26F133 Parametric

Parameter NameAttribute value
MakerNXP
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationFAST SOFT RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2.15 V
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak forward current30 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current1.05 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
Maximum reverse current5 µA
Maximum reverse recovery time0.15 µs
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
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