BYV26F133 datasheet, PDF - EEWORLD Datasheet

BYV26F133: DescriptionDIODE 1.05 A, 1200 V, SILICON, RECTIFIER DIODE, Rectifier Diode; CategoryDiscrete semiconductor diode; File Size302KB，10 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BYV26F133 Overview

DIODE 1.05 A, 1200 V, SILICON, RECTIFIER DIODE, Rectifier Diode

Parameter Name	Attribute value
Maker	NXP
package instruction	O-LALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
application	FAST SOFT RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	2.15 V
JESD-30 code	O-LALF-W2
Maximum non-repetitive peak forward current	30 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	1.05 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	1200 V
Maximum reverse current	5 µA
Maximum reverse recovery time	0.15 µs
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL

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