isc
Silicon NPN Power Transistor
DESCRIPTION
·High
Current Capability-I
C
= 5A(DC)
·DC
Current Gain—
: h
FE
= 45-450(Min) @ I
C
= 0.5 A
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 60V(Min.)
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High-current
switching in power applications.
BDX36
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Peak
Collector Power Dissipation
T
a
=25℃
Collector Power Dissipation
T
C
≤
75℃
Junction Temperature
Storage Temperature Range
VALUE
120
60
7
5
10
2
1.25
W
15
150
-65~150
℃
℃
UNIT
V
V
V
A
A
A
P
C
T
i
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance,Junction to Ambient
MAX
5
100
UNIT
℃/W
℃/W
isc website
：
www.iscsemi.com
1
isc & iscsemi
is registered trademark
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(sat)-1
V
BE
(sat)-2
I
CBO
I
EBO
h
FE
f
T
C
OB
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current-Gain—Bandwidth Product
Collector Capacitance
CONDITIONS
I
C
= 10mA; I
B
= 0
I
C
= 5 A ;I
B
= 0.5A
I
C
= 10A ;I
B
= 1A
I
C
= 5 A ;I
B
= 0.5A
I
C
= 10A ;I
B
= 1A
V
CB
= 100V
;
I
E
= 0
V
CB
= 100V
;
I
E
= 0; T
C
= 100℃
V
EB
= 5V; I
C
= 0
I
C
= 0.5A ; V
CE
= 10V
I
C
= 0.5 A; V
CE
= 5V; f= 100MHz
I
E
= 0; V
CB
= 10V; f
test
= 1MHz
45
100
40
MIN
60
BDX36
MAX
UNIT
V
0.9
2.0
1.7
2.5
0.1
10
0.1
450
V
V
V
V
μA
μA
MHz
pF
Switching Times
t
on
t
off
t
on
t
off
t
on
t
off
Turn-On Time
Turn-Off Time
Turn-On Time
Turn-Off Time
Turn-On Time
Turn-Off Time
I
C
= 1A; I
B1
= -I
B2
= 0.1A
100
800
80
700
300
500
ns
ns
ns
ns
ns
ns
I
C
= 2A; I
B1
= -I
B2
= 0.2A
I
C
= 5A; I
B1
= -I
B2
= 0.5A
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc website
：
www.iscsemi.com
2
isc & iscsemi
is registered trademark
京公网安备 11010802033920号
EEWORLD
