BA317136 datasheet, PDF - EEWORLD Datasheet

BA317136: DescriptionDIODE 0.1 A, 40 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode; CategoryDiscrete semiconductor diode; File Size122KB，5 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BA317136 Overview

DIODE 0.1 A, 40 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode

Parameter Name	Attribute value
Maker	NXP
package instruction	O-LALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JEDEC-95 code	DO-35
JESD-30 code	O-LALF-W2
Maximum non-repetitive peak forward current	4 A
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Maximum output current	0.1 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Maximum power dissipation	0.35 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	40 V
Maximum reverse current	0.2 µA
Maximum reverse recovery time	0.004 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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