TSOP41..PM1
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP41..PM1 - series are miniaturized receivers
for infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. The main benefit is the
operation with short burst transmission codes and
high data rates.
3
16115
Features
• Photo detector and preamplifier in one
package
• Internal filter for PCM frequency
e3
• Improved shielding against electrical
field
disturbance
• TTL and CMOS compatibility
• Output active low
• Low power consumption
• High immunity against ambient light
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Special Features
• Enhanced data rate of 4000 bit/s
• Operation with short bursts possible
(≥ 6 cycles/burst)
Parts Table
Part
TSOP4130PM1
TSOP4133PM1
TSOP4136PM1
TSOP4137PM1
TSOP4138PM1
TSOP4140PM1
TSOP4156PM1
Carrier Frequency
30 kHz
33 kHz
36 kHz
36.7 kHz
38 kHz
40 kHz
56 kHz
Block Diagram
Application Circuit
16836
3
25 kΩ
Input
PIN
AGC
Band
Pass
Demo-
dulator
V
S
16842
1
OUT
Circuit
Transmitter
TSOPxxxx
with
TSALxxxx
R
1
= 100
Ω
V
S
C
1
=
4.7 µF
V
O
+V
S
2
Control Circuit
GND
OUT
GND
µC
GND
R
1
+ C
1
recommended to suppress power supply
disturbances.
The output voltage should not be hold continuously at
a voltage below V
O =
3.3 V by the external circuit.
Document Number 84631
Rev. 1.0, 01-Mar-05
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1
TSOP41..PM1
Vishay Semiconductors
Absolute Maximum Ratings
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Voltage
Supply Current
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
(T
amb
≤
85 °C)
t
≤
10 s, 1 mm from case
(Pin 3)
(Pin 3)
(Pin 1)
(Pin 1)
Test condition
Symbol
V
S
I
S
V
O
I
O
T
j
T
stg
T
amb
P
tot
T
sd
Value
- 0.3 to + 6.0
5
- 0.3 to + 6.0
5
100
- 25 to + 85
- 25 to + 85
50
260
Unit
V
mA
V
mA
°C
°C
°C
mW
°C
Electrical and Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Current (Pin 3)
Supply Voltage (Pin 3)
Transmission Distance
E
v
= 0, test signal see fig.3,
IR diode TSAL6200,
I
F
= 250 mA
I
OL
= 0.5 mA, E
e
= 0.7 mW/m
2
,
f = f
o
, test signal see fig. 1
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig.3
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig.3
Test signal see fig. 1
Angle of half transmission
distance
Test condition
V
S
= 5 V, E
v
= 0
V
S
= 5 V, E
v
= 40 klx, sunlight
Symbol
I
SD
I
SH
V
S
d
4.5
35
Min
0.8
Typ.
1.2
1.5
5.5
Max
1.5
Unit
mA
mA
V
m
Output Voltage Low (Pin 1)
Minimum Irradiance
(30 - 40 kHz)
Minimum Irradiance (56 kHz)
V
OL
E
e min
0.2
250
0.4
mV
mW/m
2
E
e min
0.3
0.5
mW/m
2
Maximum Irradiance
Directivity
E
e max
ϕ
1/2
30
± 45
W/m
2
deg
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Document Number 84631
Rev. 1.0, 01-Mar-05
TSOP41..PM1
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
E
e
Optical Test Signal
(IR diode TSAL6200, I
F
=0.4 A, N=6 pulses, f=f
0
, T=10 ms)
T
on
,T
off
– Output Pulse Width ( ms )
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
l
= 950 nm,
optical test signal, fig.3
Toff
Ton
t
pi
*)
T
*) t
pi
w
6/fo is recommended for optimal function
Output Signal
V
O
V
OH
V
OL
t
d1 )
1)
2)
t
14337
3/f
0
< t
d
< 9/f
0
t
pi
– 4/f
0
< t
po
< t
pi
+ 6/f
0
t
t
po2 )
10.0
100.0 1000.010000.0
16910
E
e
– Irradiance ( mW/m
2
)
Figure 1. Output Function
Figure 4. Output Pulse Diagram
0.35
E
e min
/ E
e
– Rel. Responsivity
t
po
– Output Pulse Width ( ms )
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.7
16926
0.30
Output Pulse
0.25
0.20
0.15
0.10
0.05
0.00
0.1
l
= 950 nm,
optical test signal, fig.1
Input Burst Duration
f = f
0
"5%
Df
( 3dB ) = f
0
/7
0.9
1.1
1.3
1.0
10.0
100.0 1000.010000.0
16907
E
e
– Irradiance ( mW/m
2
)
f/f
0
– Relative Frequency
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Figure 5. Frequency Dependence of Responsivity
E
e
Optical Test Signal
E
e min
– Threshold Irradiance ( mW/m
2
)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
Ambient,
l
= 950 nm
Correlation with ambient light sources:
10W/m
2
^1.4klx
(Std.illum.A,T=2855K)
10W/m
2
^8.2klx
(Daylight,T=5900K)
600
ms
T = 60 ms
Output Signal,
( see Fig.4 )
600
ms
t
94 8134
V
O
V
OH
V
OL
T
on
T
off
t
16911
0.10
1.00
10.00
(W/m
2
)
100.00
E – Ambient DC Irradiance
Figure 3. Output Function
Figure 6. Sensitivity in Bright Ambient
Document Number 84631
Rev. 1.0, 01-Mar-05
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TSOP41..PM1
Vishay Semiconductors
E
e min
– Threshold Irradiance ( mW/m
2
)
E
e min
– Threshold Irradiance ( mW/m
2
)
2.0
f = f
o
f = 10 kHz
1.0
0.6
0.5
0.4
0.3
0.2
0.1
0.0
–30 –15 0
15 30 45 60 75
T
amb
– Ambient Temperature ( C )
Sensitivity in dark ambient
1.5
f = 1 kHz
0.5
f = 100 Hz
0.0
0.1
1.0
10.0
100.0
1000.0
DV
sRMS
– AC Voltage on DC Supply Voltage (mV)
90
16912
16918
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Figure 10. Sensitivity vs. Ambient Temperature
E
e min
– Threshold Irradiance ( mW/m
2
)
2.0
f(E) = f
0
1.6
1.2
0.8
0.4
0.0
0.0
0.4
0.8
1.2
1.6
2.0
E – Field Strength of Disturbance ( kV/m )
S (
λ
)
rel
-
Relative Spectral Sensitivity
1.2
1.0
0.8
0.6
0.4
0.2
0.0
750
850
950
1050
1150
94 8147
16919
λ
-
Wavelength ( nm )
Figure 8. Sensitivity vs. Electric Field Disturbances
Figure 11. Relative Spectral Sensitivity vs. Wavelength
1.0
0.9
Max. Envelope Duty Cycle
0
10
20
30
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100
120
96 12223p2
40
1.0
0.9
0.8
f = 38 kHz, E
e
= 2
mW/m
2
0.7
50
60
70
80
0.6
0.6
0.4
0.2
0
0.2
0.4
d
rel
– Relative Transmission Distance
16914
Burst Length ( number of cycles / burst )
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Directivity
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Document Number 84631
Rev. 1.0, 01-Mar-05
TSOP41..PM1
Vishay Semiconductors
Suitable Data Format
The circuit of the TSOP41..PM1 is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpass filter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
• Burst length should be 6 cycles/burst or longer.
• After each burst which is between 6 cycles and 70
cycles a gap time of at least 10 cycles is necessary.
• For each burst which is longer than 1.8 ms a corre-
sponding gap time is necessary at some time in the
data stream. This gap time should have at least same
length as the burst.
• Up to 2200 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code, Toshiba Micom Format, Sharp Code, RC5
Code, RC6 Code, RCMM Code, R-2000 Code,
RECS-80 Code.
When a disturbance signal is applied to the
TSOP41..PM1 it can still receive the data signal.
However the sensitivity is reduced to that level that no
unexpected pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP41..PM1 are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other fre-
quency
• Signals from fluorescent lamps with electronic bal-
last (an example of the signal modulation is in the fig-
ure below).
IR Signal
IR Signal from fluorescent
lamp with low modulation
0
16920
5
10
Time ( ms )
15
20
Figure 13. IR Signal from Fluorescent Lamp with low Modulation
Document Number 84631
Rev. 1.0, 01-Mar-05
www.vishay.com
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