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BFJ10

Description
Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-247AD
CategoryDiscrete semiconductor    The transistor   
File Size50KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

BFJ10 Overview

Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-247AD

BFJ10 Parametric

Parameter NameAttribute value
MakerTT Electronics plc
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Other featuresLOW CONDUCTION LOSS
Maximum collector current (IC)35 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
JEDEC-95 codeTO-247AD
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment147 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
VCEsat-Max2.5 V
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