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IRF9358TRPBF

Description
9.2 A, 30 V, 0.0163 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA
Categorysemiconductor    Discrete semiconductor   
File Size269KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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IRF9358TRPBF Overview

9.2 A, 30 V, 0.0163 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA

IRF9358TRPBF Parametric

Parameter NameAttribute value
Number of terminals8
Minimum breakdown voltage30 V
Processing package descriptionHALOGEN FREE AND ROHS COMPLIANT, SOP-8
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Number of components2
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeP-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current9.2 A
Rated avalanche energy210 mJ
Maximum drain on-resistance0.0163 ohm
Maximum leakage current pulse73 A
PD - 97616
IRF9358PbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= -10V)
-30
16.3
23.8
19
-9.2
V
nC
A
S2 1
G 2
2
S1 3
G 4
1
D
8 D2
7 D2
6 D1
5 D1
R
DS(on) max
(@V
GS
= -4.5V)
D
Q
g (typical)
I
D
(@T
A
= 25°C)
SO-8
Applications
Charge and Discharge Switch for Notebook PC Battery Application
Features and Benefits
Features
Industry-Standard SO-8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
results in Multi-Vendor Compatibility
Environmentally Friendlier
Orderable part number
IRF9358PbF
IRF9358TRPbF
Package Type
SO8
SO8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Note
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
-30
± 20
-9.2
-7.3
-73
2.0
1.3
0.016
-55 to + 150
Units
V
f
Power Dissipation
f
Power Dissipation
c
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes

through
†
are on page 2
www.irf.com
1
1/2/11

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