|
IRFD121 |
IRFD221 |
IRFD211 |
IRFD2Z1 |
IRFD111 |
IRFD112 |
| Description |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| Is it Rohs certified? |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
| Reach Compliance Code |
unknown |
unknown |
unknown |
unknown |
unknow |
unknow |
| Configuration |
Single |
Single |
Single |
Single |
Single |
Single |
| Maximum drain current (Abs) (ID) |
1.3 A |
0.8 A |
0.6 A |
0.32 A |
1 A |
0.8 A |
| FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
| JESD-609 code |
e0 |
e0 |
e0 |
e0 |
e0 |
e0 |
| Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| Maximum operating temperature |
150 °C |
150 °C |
150 °C |
150 °C |
150 °C |
150 °C |
| Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
| Maximum power dissipation(Abs) |
1 W |
1 W |
1 W |
1 W |
1 W |
1 W |
| surface mount |
NO |
NO |
NO |
NO |
NO |
NO |
| Terminal surface |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
| Maker |
Thomson Consumer Electronics |
- |
Thomson Consumer Electronics |
Thomson Consumer Electronics |
Thomson Consumer Electronics |
Thomson Consumer Electronics |