IRFN440 datasheet, PDF - EEWORLD Datasheet

IRFN440: DescriptionPower Field-Effect Transistor, 6.1A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size81KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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IRFN440 Overview

Power Field-Effect Transistor, 6.1A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	UNCASED CHIP, R-XUUC-N3
Reach Compliance Code	compliant
Configuration	SINGLE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	6.1 A
Maximum drain-source on-resistance	0.95 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XUUC-N3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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