ZTX653DCSM
MECHANICAL DATA
Dimensions in mm (inches)
NPN DUAL TRANSISTOR IN A
HERMETICALLY SEALED CERAMIC
SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
2.29 ± 0.20
(0.09 ± 0.008)
1.65 ± 0.13
(0.065 ± 0.005)
0.64 ± 0.06
(0.025 ± 0.003)
1.40 ± 0.15
(0.055 ± 0.006)
FEATURES
• DUAL SILICON PLANAR NPN
4.32 ± 0.13
(0.170 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
2
1
A
3
4
5
TRANSISTORS
• HERMETIC SURFACE MOUNT PACKAGE
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVEL OPTIONS
6
0.23 rad.
(0.009)
A = 1.27 ± 0.13
(0.05 ± 0.005)
6.22 ± 0.13
(0.245 ± 0.005)
LCC2 PACKAGE
Underside View
PAD 1 – Collector 1
PAD 2 – Base 1
PAD 3 – Base 2
PAD 4 – Collector 2
PAD 5 – Emitter 2
PAD 6 – Emitter 1
ABSOLUTE MAXIMUM RATINGS PER SIDE
(T
C
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
P
TOT
T
j
T
STG
R
θJ-A
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Power Dissipation @ T
amb
= 25°C
Derate above 25°C
Operating And Storage Temperature Range
Junction - Ambient Thermal Resistance
120V
100V
5V
2A
1.0W
–55 to 150°C
8mW/°C
125°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3517
Issue 2
ZTX653DCSM
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
Parameter
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Cut-off Current
Emitter Cut-off Current
Test Conditions
I
C
= 100µA
I
E
= 100µA
V
CB
= 100V
T
C
= 100°C
V
EB
= 4V
I
C
= 500mA
I
B
= 50mA*
I
B
= 100mA*
I
B
= 200mA*
I
B
= 100mA*
V
CE
= 2V*
V
CE
= 2V*
V
CE
= 2V*
V
CE
= 2V*
V
CE
= 2V*
Min.
120
100
5
Typ.
Max. Unit
V
0.1
10
0.1
µA
Collector – Emitter Breakdown Voltage I
C
= 10mA
0.2
0.35
0.8
1.0
0.95
70
100
55
25
200
200
110
55
0.3
0.5
1.0
1.3
1.2
300
V
Collector – Emitter Saturation Voltage I
C
= 1.0A
I
C
= 2A
Base – Emitter Saturation Voltage
Base – Emitter Turn-On Voltage
I
C
= 1.0A
I
C
= 1.0A
I
C
= 50mA
I
C
= 500mA
I
C
= 1.0A
I
C
= 2A
H
FE
DC Current Gain
—
* Pulse test tp = 300ms ,
δ ≤
2%
DYNAMIC CHARACTERISTICS
Parameter
f
T
C
obo
T
on
T
off
Transition Frequency
Output Capacitance
Switching Times
Switching Times
(T
A
= 25°C unless otherwise stated)
Test Conditions
I
C
= 100mA
V
CB
= 10V
V
CE
= 5V
f = 1.0MHz
f = 100MHz
Min.
140
Typ.
175
Max. Unit
MHz
30
pF
ns
I
C
= 500mA V
CC
= 10V
I
B1
=I
B2
=50mA
80
1200
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3517
Issue 2
RF/Wirelessly
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