2N3415
2N3415
B
CE
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. See PN100A for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
25
25
5.0
500
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θ
JA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
2N3415
625
5.0
83.3
200
Units
mW
mW/
°
C
°
C/W
°C/W
©
2001 Fairchild Semiconductor Corporation
2N3415, Rev B
2N3415
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 10
µ
A, I
E
= 0
I
E
= 10
µ
A, I
C
= 0
V
CB
= 25 V, I
E
= 0
V
CB
= 25 V, I
E
= 0, T
A
= 100°C
V
EB
= 5.0 V, I
C
= 0
25
25
5.0
0.1
15
0.1
V
V
V
µ
A
µ
A
µ
A
ON CHARACTERISTICS*
h
FE
V
CE(
sat
)
V
BE(
sat
)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
CE
= 4.5 V, I
C
= 2.0 mA
I
C
= 50 mA, I
B
= 3.0 mA
I
C
= 50 mA, I
B
= 3.0 mA
0.6
180
540
0.3
1.3
V
V
SMALL SIGNAL CHARACTERISTICS
h
fe
Small-Signal Current Gain
I
C
= 2.0 mA, V
CE
= 4.5 V,
f = 1.0 kHz
180
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
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E
2
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TM
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®
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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As used herein:
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support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
51mcu
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