Datasheet No – 97476
July 1, 2011
IR11682S
DUAL SmartRectifier
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Secondary-side
high
speed
controller
for
synchronous rectification in resonant half bridge
topologies
200V proprietary IC technology
Max 400KHz switching frequency
Anti-bounce logic and UVLO protection
4A peak turn off drive current
Micropower start-up & ultra low quiescent current
10.7V gate drive clamp
80ns turn-off propagation delay
Wide Vcc operating range
Direct sensing for both Synchronous Rectifiers
Cycle by Cycle MOT Check Circuit prevents multiple
false trigger GATE pulses
Minimal component count
Simple design
Lead-free
TM
DRIVER IC
Product Summary
Topology
VD
V
OUT
I
o+
& I
o-
(typical)
Turn on Propagation Delay
Turn off Propagation Delay
LLC Half-bridge
200V
10.7V Clamped
+1A & -4A
100ns (typical)
80ns (typical)
Package Options
Typical Applications
•
LCD & PDP TV, Telecom SMPS, AC-DC adapters
8-Lead SOIC
Typical Connection Diagram
Vin
SR1
C1
Cdc
M1
Lr
1
2
1
2
3
4
GATE1
VCC
VS1
VD1
GATE2
GND
VS2
VD2
8
7
6
5
Rg1
C2
M2
IR1168
IR11682
Rg2
Cout
LOAD
Rtn
SR2
www.irf.com
© 2010 International Rectifier
IR11682S
Table of Contents
Description
Qualification Information
Absolute Maximum Ratings
Electrical Characteristics
Functional Block Diagram
Input/Output Pin Equivalent Circuit Diagram
Lead Definitions
Lead Assignments
Application Information and Additional Details
Package Details
Tape and Reel Details
Part Marking Information
Ordering Information
Page
3
4
5
6
8
9
10
10
12
19
20
21
22
www.irf.com
© 2010 International Rectifier
2
IR11682S
Description
IR11682 is a dual smart secondary-side rectifier driver IC designed to drive two N-Channel power MOSFETs
used as synchronous rectifiers in resonant converter applications. The IC can control one or more paralleled N
MOSFETs to emulate the behavior of Schottky diode rectifiers. The drain to source for each rectifier MOSFET
voltage is sensed differentially to determine the level of the current and the power switch is turned ON and
OFF in close proximity of the zero current transition. The anti shoot-through logic prevents both channels from
turning on the power switches at the same time. The cycle-by-cycle MOT protection circuit can automatically
detect no load condition and turn off gate driver output to avoid negative current flowing through the
MOSFETs. Ruggedness and noise immunity are accomplished using an advanced blanking scheme and
double-pulse suppression that allows reliable operation in fixed and variable frequency applications.
www.irf.com
© 2010 International Rectifier
3
IR11682S
Qualification Information
†
Qualification Level
Industrial
Comments: This family of ICs has passed JEDEC’s
Industrial qualification. IR’s Consumer qualification level is
granted by extension of the higher Industrial level.
†††
MSL2 260°
C
SOIC8N
(per IPC/JEDEC J-STD-020)
Class B
(per JEDEC standard JESD22-A115)
Class 2
(per EIA/JEDEC standard EIA/JESD22-A114)
Class 1, Level A
(per JESD78)
Yes
††
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
IC Latch-Up Test
RoHS Compliant
†
††
†††
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/
Higher qualification ratings may be available should the user have such requirements. Please contact
your International Rectifier sales representative for further information.
Higher MSL ratings may be available for the specific package types listed here. Please contact your
International Rectifier sales representative for further information.
www.irf.com
© 2010 International Rectifier
4
IR11682S
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The
thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Parameters
Supply Voltage
Cont. Drain Sense Voltage
Pulse Drain Sense Voltage
Source Sense Voltage
Gate Voltage
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Package Power Dissipation
Switching Frequency
Symbol
V
CC
V
D
V
D
V
S
V
GATE
T
J
T
S
R
θJA
P
D
fsw
Min.
-0.3
-1
-5
-3
-0.3
-40
-55
Max.
20
200
200
20
20
150
150
128
970
400
Units
V
V
V
V
V
°
C
°
C
°
C/W
mW
kHz
Remarks
V
CC
=20V, Gate off
SOIC-8
SOIC-8, T
AMB
=25°
C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol
V
CC
V
D1,
V
D2
T
J
Fsw
Definition
Supply voltage
Drain Sense Voltage
Junction Temperature
Switching Frequency
Min.
8.6
-3
†
-25
---
Max.
18
200
125
400
Units
V
°
C
kHz
† V
D1,
V
D2
-3V negative spike width
≤
100ns
www.irf.com
© 2010 International Rectifier
5
京公网安备 11010802033920号
EEWORLD
