DATA SHEET
SEMICONDUCTOR
1.5SMCJ Series
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE - 5.0 to 440 Volts 1500 Watt Peak Power Pulse
FEATURES
For surface mounted applications in order to optimize board space.
Low profile package
Built-in strain relief
Glass passivated junction
Low inductance
Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
High temperature soldering : 260°C /10 seconds at terminals
High temperature soldering : 260 C / 10 seconds at terminals
Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
.103(2.62)
.079(2.00)
O
SMC/DO-214AB
Unit:inch(mm)
.128(3.25)
.108(2.75)
.245(6.22)
.220(5.59)
.280(7.11)
.260(6.60)
.012(.305)
.006(.152)
MECHANICAL DATA
Case: JEDEC DO-214AB,Molded plastic over passivated junction.
Terminals: Solder plated,solderable per MIL-STD-750, Method 2026
Polarity: Color band denotes positive end (cathode)
Standard Packaging:16mm tape (EIA-481)
Weight: 0.007 ounce, 0.021 gram
.060(1.52)
.030(0.76)
.320(8.13)
.305(7.75)
.008(.203)
.002(.051)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types 1.5SMCJ5.0 thru types 1.5SMCJ220.
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For Capacitive load derate current by 20%.
RATING
Peak Power Dissipation at TA=25°C, TP=1ms(Note 1,2,Fig.1)
Peak Forward Surge Current, 8.3ms Single Half Sine-Wave
Superimposed on Rated Load (Note 2,3)
Peak Pulse Current Current on 10/1000s waveform(Note
1,Fig.3)
Operating and Storage Temperature Range
NOTES:
SYMBOL
PPPM
IFSM
VALUE
1500
100
UNITS
Watts
Amps
IPPM
TJ, TSTG
See Table 1
-55 to +150
Amps
°C
1.Non-repetitive current pulse, per Fig. 3 and derated above TA=25°Cper Fig. 2.
2.Mounted on 5.0mm2 ( .013mm thick) land areas.
3.Measured on 8.3ms , single half sine-wave or equivalent square wave , duty cycle= 4 pulses per minutes maximum.
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REV.03 20130403
DEVICE CHARACTERISTICS
1.5SMCJ Series
P
PPM
,PEAK PULSE FORWARD,KW
100
Non-Repetitve
Pulse Wavefom
Shown in Figure.3
O
T
A
= 25 C
100
PEAK PULSE FORWARD (P
PP
) OR CURRENT (I
PP
)
DERATING IN PERCENTAGE %
75
10
50
1.0
Mounted on 5.0mm
Copper Land Areas
25
0.1
0.1
1.0
10
100
1000
10000
0
0
25
50
75
100
125
150
175
200
td,PULSE WIDTH, micro sec
T
A
,AMBIENT TEMPERATURE, C
O
Fig.1 PEAK PULSE POWER RATING CURVE
Fig.2 DERATING CURVE
I
PPM
,PEAK PULSE CURRENT,%
150
tf = 10usec
T
A
= 25
O
C
Pulse Width (td) is Defined
as the Point where the Peak
Current Decayst to 50% of Ipp
20,000
10,000
Tj= 25 C
f= 1.0MHZ
Vsig = 50mVp -p
O
100
Peak Value
Ippm
C
J
,CAPACIT
ANCE,p F
Ha lf Va lue -Ip p
2
50
10/1000u se c Wa ve fo rm
a s De fine d b ye R.E.A.
Mea sured a t
Ze ro Bia s
e -kt
1,000
Me a sured a t
Sta nd -Off
Volta
ge
(V
RWM
)
td
0
0
1.0
2.0
3.0
4.0
T,TIME,ms
Fig.3 PULSE WAVEFORM
100
I
FSM
,PEAK FORWARD SURGE CURRENT,
AMPERES
200
T
J
= T
J
m a x
8.3ms Sin g le Ha lf Sine -Wave
JEDEC M e tho d
10
100
1.0
2.0
5.0 10
20
50 100
200
50
V
RWM
, REVERSE STAND-OFF VOLTAGE VOLTS
Fig.4 TYPICAL CAPACITANCE
10
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
Fig.5 MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
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REV.03 20130403
Renesas Electronics MCUs
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