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2KBP08M

Description
2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size349KB,2 Pages
ManufacturerYEA SHIN TECHNOLOGY CO.,LTD
Websitehttp://www.yeashin.com/
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2KBP08M Overview

2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

DATA SHEET
SEMICONDUCTOR
2KBP005M THRU 2KBP10M
Glass Passivated Single-Phase Bridge Rectifier
Reverse Voltage 50 to 1000 V Forward Current 2.0 A
KBPM
Unit:inch(mm)
FEATURES
•Plastic
package has Underwriters Laboratory
Flammability Classification 94V-0
•This
series is UL listed under Recognized Component
Index, file number E54214
•Typical
IR less than 0.1μA
•High
case dielectric strength
•Ideal
for printed circuit boards
•High
temperature soldering guaranteed:
260°C/10 seconds at 5 lbs. (2.3kg) tension
•High
temperature soldering : 260
O
C / 10 seconds at terminals
•Pb
free product at available : 99% Sn above meet RoHS
environment substance directive request
0.034 (0.86)
0.028 (0.76)
DIA.
60
(15.2)
MIN.
0.039
(1.0)
0.160 (4.1)
0.140 (3.6)
0.075 (1.91)
0.049 (1.25)
0.50
(12.7)
MIN.
0.460 (11.68)
0.420 (10.67)
0.500 (12.70)
0.460 (11.68)
0.125 x 45
o
(3.2)
0.600 (15.24)
0.560 (14.22)
MECHANICAL DATA
•Case:
Molded plastic body over passivated junctions
•Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
•Polarity:
Polarity symbols marked on case
•Mounting
Position: Any
•Weight:
0.06 oz., 1.7 g
•Packaging
codes/options:
1/600 EA. per Bulk Tray Stack
0.1693 (4.3)
0.1456 (3.7)
Polarity shown on front side of case: positive lead by beveled corner
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
* Maximum repetitive peak reverse voltage
* Maximum RMS voltage
* Maximum DC blocking voltage
Maximum average forward output rectified
current at
TA=55°C
* Peak forward surge current single half sine-wave
superimposed on rated load (JEDEC Method)
TJ=150°C
Rating for fusing (t < 8.3ms)
Typical thermal resistance per leg (1)
* Operating junction and storage temperature range
I2t
RΘJA
RΘJL
TJ, TSTG
15
30
11
-55 to +150
°C
A2sec
°C/W
IFSM
60
A
Symbols
VRRM
VRMS
VDC
IF(AV)
2KBP
005M
50
35
50
2KBP
01M
100
70
100
2KBP
02M
200
140
200
2KBP
04M
400
280
400
2.0
2KBP
06M
600
420
600
2KBP
08M
800
560
800
2KBP
10M
1000
700
1000
Units
V
V
V
A
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
* Maximum instantaneous forward voltage drop
per leg at 2A
* Maximum DC reverse current TA=25°C
at rated DC blocking voltage per leg TA=125°C
Typical junction capacitance per leg at 4.0V, 1MHZ
* JEDEC registered values
VF
IR
CJ
1.1
5.0
500
25
V
μA
pF
Notes: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" (12 x12mm) copper pads
http://www.yeashin.com
1
REV.02 20120305

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