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5.0SMCJ170

Description
5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size1MB,4 Pages
ManufacturerYEA SHIN TECHNOLOGY CO.,LTD
Websitehttp://www.yeashin.com/
Download Datasheet View All

5.0SMCJ170 Overview

5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

DATA SHEET
SEMICONDUCTOR
5.0SMCJ Series
Surface Mount
Transient Voltage Suppressors
Working Voltage: 11 to 440 V
Peak Pulse Power: 5000 W
Features
Glass passivated chip
5000 W peak pulse power capability with a
10/1000 s waveform, repetitive rate (duty
cycle):0.01 %
Low leakage
Uni and Bidirectional unit
Excellent clamping capability
Very fast response time
RoHS compliant
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Solderable per MIL-STD-750, method
2026
Polarity: Color band denotes cathode end
except Bipolar
Mounting position: Any
0.245 6.15
0.22 5.52
SMC/ DO-214AB
0.126 3.16
0.114 2.86
[ ]
[ ]
0.28 7.02
0.26 6.52
[ ]
0.012 0.30
0.006 0.15
0.103 2.59
0.079 1.98
[ ]
0.06 1.51
0.03 0.75
[ ]
Mechanical Data
[ ]
0.32 8.02
0.305
[
7.64
]
0.008 0.20
0
0.00
[ ]
Dimensions : inch [ mm ]
Maximum Ratings(T
A
=25
unless otherwise noted)
Value
Symbol
P
PP
5000
I
PP
See Next Table
P
D
6.5
I
FSM
V
F
T
J
, T
STG
300
3.5/5.0
–55 to +150
UNIT
W
A
W
A
V
°C
Parameter
Peak power dissipation with a 10/1000 s waveform
(1)
(1)
Peak pulse current wih a 10/1000 s waveform
Power dissipation on infinite heatsink at T
L
= 75 °C
Peak forward surge current, 8.3 ms single half sine-
(2)
wave unidirectional only
Maximum instantaneous forward voltage at 100 A for
unidirectional only
(3)
Operating junction and storage temperature range
Note:
(1)Non-repetitive current pulse per Fig.5 and derated above T
A
= 25 °C per Fig.1
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3)V
F
<3.5V for devices of V
BR
<200V and V
F
<5.0V for devices of V
BR
>201V
http://www.yeashin.com
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