DATA SHEET
SEMICONDUCTOR
B1S THRU B10S
MINI SURFACE MOUNT GLASS PASSIVATED
SINGLE-PHASE BRIDGE RECTIFIER
VOLTAGE
100 to 1000Volts
CURRENT
0.5 Amperes
FEATURES
•Plastic
material used carries Underwriters
Laboratory recognition 94V-O
•Low
leakage
•Surge
overload rating-- 30 amperes peak
•Ideal
for printed circuit board
•Exceeds
environmental standards of MIL-S-19500
•High
temperature soldering : 260
O
C / 10 seconds at terminals
•Pb
free product at available : 99% Sn above meet RoHS
environment substance directive request
MDI Unit:inch(mm)
DI
+
.157(4.0)
.142(3.6)
~
~
.008(0.2)
.275(7.0)
MAX
.043(1.1)
.027(0.7)
.106(2.7)
.090(2.3)
.031(0.8)
.019(0.5)
.193(4.9)
.177(4.5)
MECHANICAL DATA
•Case:
Reliable low cost construction utilizing molded plastic technique results in
inexpensive product
•Terminals:
Lead solderable per MIL-STD-202, Method 208.
•Polarity:
Polarity symbols molded or marking on body.
•Mounting
Position: Any.
•Weight:
0.008 ounce, 0.22 gram.
.106(2.7)
.090(2.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, Resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current TA=40℃
TA=25℃(Note 3)
Peak Forward Surge Current:8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
I2t Rating for fusing (t<8.35ms)
Maximum Forward Voltage Drop per Bridge Element at 0.5A
Maximum DC Reverse Current TJ=25℃
at Rated DC Blocking Voltage TJ=125℃
Typical Junction capacitance (Note 1)
Typical thermal resistance per leg (Note2)
Operating Junction and Storage Temperature Range
NOTES:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
SYMBOL
VRRM
VRMS
VDC
IAV
IFSM
I2t
VF
IR
CJ
Rθ A J
Rθ L J
TJ, TSTG
B1S
100
70
100
B2S
200
140
200
B4S
400
280
400
0. 5
0.8*
35
B6S
600
420
600
B8S
800
560
800
B10S
1000
700
1000
UNITS
V
V
V
A
A
A2t
V
uA
pF
℃/W
℃
3.735
1.0
5.0
500
25
85
20
-55 to +150
2. Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 X 0.5"(13 X 13mm) copper pads
3. * R-load on alumina subtrate Ta=25oC
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DEVICE CHARACTERISTICS
B1S THRU B10S
FORWARD SURGE CURRENT, AMPERES pk
(HALF-SINE WAVE)
50
1.00
40
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
2
4
6
8 10
20
40
60 80 100
0.75
30
0.50
20
0.25
10
1
0
20
40
60
80
10 0
120
140
150
NUMBER OF CYCLES AT 60Hz
Fig.1 MAXIMUM NON-REPETITIVE SURGE CURRENT
AMBIENT TEMPERATURE, C
O
Fig.2 DERATING CURVE FOR OUTPUT RECTIFIED CURRENT
INSTANTANEOUS REVERSE CURRENT, uA
10
10
INSTANTANEOUS FORWARD CURRENT,
AMPERES
T
J
=
125
C
O
1.0
1.0
0.1
0.1
T
J
=25 C
O
0.01
0.4
0.01
0
20
40
60
80
100
120
140
0.6
0.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
PERCENTAGE OF PEAK REVERSE VOLTAGE, %
Fig.3 TYPICAL FORWARD CHARACTERISTICS
Fig.4 TYPICAL REVERSE CHARACTEISTICS
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REV.02 20120305
DSP and ARM Processors
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