AUTOMOTIVE GRADE
PD - 96401A
Features
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AUIRFS3206
AUIRFSL3206
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
Enhanced dV/dT and dI/dT capability
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
S
D
V
(BR)DSS
R
DS(on)
typ.
max.
I
D
(Silicon Limited)
I
D
(Package Limited)
D
60V
2.4m
:
3.0m
:
210A
120A
c
Description
Specifically designed for Automotive applications, this
HEXFET
®
Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and a wide variety of other
applications.
G
D
S
G
D
S
D
2
Pak
AUIRFS3206
G
D
TO-262
AUIRFSL3206
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T
A
)
is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS (Thermally limited)
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
d
Ãd
e
f
d
210
150
120
840
300
2.0
± 20
170
See Fig. 14, 15, 22a, 22b,
5.0
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount) , D
2
Pak
k
Parameter
Typ.
Max.
0.50
40
Units
°C/W
j
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
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1
09/06/11
AUIRFS/SL3206
Static Characteristics @ T
J
= 25°C (unless otherwise stated)
Parameter
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
gfs
R
G
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
60
–––
–––
2.0
210
–––
–––
–––
–––
–––
–––
0.07
2.4
–––
–––
0.7
–––
–––
–––
–––
–––
–––
3.0
4.0
–––
–––
20
250
100
-100
Conditions
V V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 5mA
mΩ V
GS
= 10V, I
D
= 75A
V V
DS
= V
GS
, I
D
= 150μA
S V
DS
= 50V, I
D
= 75A
Ω
V
DS
=60V, V
GS
= 0V
μA
V
DS
= 48V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
nA
V
GS
= -20V
g
d
Dynamic Characteristics @ T
J
= 25°C (unless otherwise stated)
Parameter
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
120
29
35
85
19
82
55
83
6540
720
360
1040
1230
170
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Conditions
I
D
= 75A
V
DS
=30V
V
GS
= 10V
I
D
= 75A, V
DS
=0V, V
GS
= 10V
V
DD
= 30V
I
D
= 75A
R
G
=2.7Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz, See Fig.5
V
GS
= 0V, V
DS
= 0V to 48V , See Fig.11
V
GS
= 0V, V
DS
= 0V to 48V
g
ns
g
pF
h
i
hÃ
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
––– 210
–––
Conditions
MOSFET symbol
D
A
Ãd
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
p-n junction diode.
––– –––
1.3
V T
J
= 25°C, I
S
= 75A, V
GS
= 0V
T
J
= 25°C
V
R
= 51V,
–––
33
50
ns
T
J
= 125°C
I
F
= 75A
–––
37
56
di/dt = 100A/μs
T
J
= 25°C
–––
41
62
nC
T
J
= 125°C
–––
53
80
–––
2.1
–––
A T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
840
showing the
integral reverse
G
S
g
g
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.023mH
R
G
= 25Ω, I
AS
= 120A, V
GS
=10V. Part not recommended for use
above this value.
I
SD
≤
75A, di/dt
≤
360A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C
2
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AUIRFS/SL3206
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments:
This part
number(s) passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
3L-D2 PAK
3L-TO-262
MSL1
N/A
Class M4(+/- 800V )
(per AEC-Q101-002)
Class H2(+/- 4000V )
(per AEC-Q101-001)
Class C5(+/- 2000V )
(per AEC-Q101-005)
Yes
†††
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
†††
†††
†
††
†††
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
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3
AUIRFS/SL3206
1000
TOP
1000
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
100
4.5V
4.5V
10
0.1
1
≤
60μs PULSE WIDTH
Tj = 25°C
10
10
100
0.1
1
≤
60μs PULSE WIDTH
Tj = 175°C
10
100
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
2.5
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
ID = 75A
VGS = 10V
2.0
TJ = 175°C
10
1.5
TJ = 25°C
1
1.0
VDS = 25V
≤
60μs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
12000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
8000
Fig 4.
Normalized On-Resistance vs. Temperature
20
VGS, Gate-to-Source Voltage (V)
ID= 75A
VDS = 48V
VDS= 30V
VDS= 12V
10000
16
C, Capacitance (pF)
Ciss
12
6000
8
4000
4
2000
Coss
Crss
0
1
10
100
0
0
40
80
120
160
200
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
4
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AUIRFS/SL3206
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
100
TJ = 175°C
1000
1msec
100μsec
100
10
TJ = 25°C
10
10msec
1
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
DC
0.1
100
VDS, Drain-toSource Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
240
200
ID, Drain Current (A)
Fig 8.
Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage
80
Limited By Package
ID = 5mA
75
160
120
80
40
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
70
65
60
55
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
2.0
Fig 10.
Drain-to-Source Breakdown Voltage
800
EAS, Single Pulse Avalanche Energy (mJ)
1.5
600
I D
TOP
21A
33A
BOTTOM
120A
Energy (μJ)
1.0
400
0.5
200
0.0
0
10
20
30
40
50
60
0
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting TJ, Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
Fig 12.
Maximum Avalanche Energy Vs. DrainCurrent
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