PD - 97762
AUTOMOTIVE GRADE
AUIRLL024Z
HEXFET
®
Power MOSFET
Features
●
●
●
●
●
●
●
Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to
Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
S
V
(BR)DSS
R
DS(on)
typ.
max.
I
D
55V
48m
60m
5.0A
Description
Specifically designed for Automotive applications,
this HEXFET
®
Power MOSFET utilizes the latest pro-
cessing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
D
S
D
G
SOT-223
AUIRLL024Z
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 25°C
V
GS
E
AS
E
AS
(tested )
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
i
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Parameter
Max.
5.0
4.0
40
2.8
1.0
0.02
± 16
21
38
See Fig.12a, 12b, 15, 16
-55 to + 150
Units
A
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
i
j
i
i
h
d
W
W/°C
V
mJ
A
mJ
°C
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Ã
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
Thermal Resistance
R
JA
R
JA
i
Junction-to-Ambient (PCB mount, steady state)
j
Junction-to-Ambient (PCB mount, steady state)
Parameter
Typ.
–––
–––
Max.
45
120
Units
°C/W
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
www.irf.com
1
02/28/12
AUIRLL024Z
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
55
–––
–––
–––
–––
1.0
7.5
–––
–––
–––
–––
–––
0.049
48
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
60
80
100
3.0
–––
20
250
200
-200
V
V/°C
m
V
S
μA
nA
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 3.0A
V
GS
= 5.0V, I
D
= 3.0A
V
GS
= 4.5V, I
D
= 3.0A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 3.0A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
V
GS
= -16V
e
e
e
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.0
1.5
4.0
8.6
33
20
15
380
66
36
220
53
93
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Conditions
I
D
= 3.0A
V
DS
= 44V
V
GS
= 5.0V
V
DD
= 28V
I
D
= 3.0A
R
G
= 56
V
GS
= 5.0V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
e
e
ns
pF
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
f
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
15
9.1
5.0
A
40
1.3
23
14
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
S
p-n junction diode.
T
J
= 25°C, I
S
= 3.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 3.0A, V
DD
= 28V
di/dt = 100A/μs
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
e
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L = 4.8mH
R
G
= 25, I
AS
= 3.0A, V
GS
=10V.
Part not recommended for use above this value.
Pulse width
1.0ms; duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from
0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
This value determined from sample failure population,
starting T
J
= 25°C, L = 4.8mH, R
G
= 25, I
AS
= 3.0A,
V
GS
=10V.
When mounted on 1 inch square copper board.
When mounted on FR-4 board using minimum
recommended footprint.
2
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AUIRLL024Z
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
SOT-223
MSL1
Class M1B (+/- 100V)
††
AEC-Q101-002
ESD
Human Body Model
Charged Device Model
RoHS Compliant
Class H0 (+/- 250V)
††
AEC-Q101-001
Class C5 (+/- 1125V)
††
AEC-Q101-005
Yes
Machine Model
Moisture Sensitivity Level
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Highest passing voltage.
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3
AUIRLL024Z
100
TOP
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
100
TOP
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
BOTTOM
10
BOTTOM
3.0V
1
1
3.0V
60μs PULSE WIDTH
0.1
0.1
1
Tj = 25°C
0.1
100
0.1
1
10
60μs PULSE WIDTH
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
Gfs, Forward Transconductance (S)
10
TJ = 25°C
8
T J = 150°C
ID, Drain-to-Source Current
)
T J = 150°C
10
6
1
T J = 25°C
4
2
0.1
0
2
4
VDS = 10V
60μs
PULSE WIDTH
6
8
10
V DS = 10V
300μs PULSE WIDTH
0
0
2
4
6
8
10
12
ID,Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
4
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AUIRLL024Z
10000
C oss = C ds + C gd
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
6.0
ID= 3.0A
5.0
4.0
3.0
2.0
1.0
0.0
VDS= 44V
VDS= 28V
VDS= 11V
C, Capacitance(pF)
1000
Ciss
Coss
Crss
100
10
1
10
100
0
1
2
3
4
5
6
7
8
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
100
1000
100
10
100μsec
1
0.1
DC
T A = 25°C
Tj = 150°C
Single Pulse
0.1
1.0
10
100
1000.0
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
10
T J = 150°C
TJ = 25°C
1
VGS = 0V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VSD, Source-to-Drain Voltage (V)
0.0001
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
0.01
0.001
nce
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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