BGY113E datasheet, PDF - EEWORLD Datasheet

BGY113E: DescriptionRF/Microwave Amplifier, 400 MHz - 440 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER; CategoryWireless rf/communication Radio frequency and microwave; File Size202KB，9 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BGY113E Overview

RF/Microwave Amplifier, 400 MHz - 440 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER

Parameter Name	Attribute value
Maker	NXP
Objectid	1419071344
Reach Compliance Code	unknown
compound_id	11749405
Characteristic impedance	50 Ω
structure	COMPONENT
Gain	35.5 dB
Maximum input power (CW)	7 dBm
Maximum operating frequency	440 MHz
Minimum operating frequency	400 MHz
Maximum operating temperature	90 °C
Minimum operating temperature	-30 °C
RF/Microwave Device Types	NARROW BAND HIGH POWER
Maximum voltage standing wave ratio	2

	BGY113E	BGY113F	BGY113G
Description	RF/Microwave Amplifier, 400 MHz - 440 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER	RF/Microwave Amplifier, 430 MHz - 470 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER	RF/Microwave Amplifier, 470 MHz - 520 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
Maker	NXP	NXP	NXP
Reach Compliance Code	unknown	unknown	unknow
Characteristic impedance	50 Ω	50 Ω	50 Ω
structure	COMPONENT	COMPONENT	COMPONENT
Gain	35.5 dB	35.5 dB	35.5 dB
Maximum input power (CW)	7 dBm	7 dBm	7 dBm
Maximum operating frequency	440 MHz	470 MHz	520 MHz
Minimum operating frequency	400 MHz	430 MHz	470 MHz
Maximum operating temperature	90 °C	90 °C	90 °C
Minimum operating temperature	-30 °C	-30 °C	-30 °C
RF/Microwave Device Types	NARROW BAND HIGH POWER	NARROW BAND HIGH POWER	NARROW BAND HIGH POWER
Maximum voltage standing wave ratio	2	2	2

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