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ZXMP10A08GTA

Description
Power Field-Effect Transistor, 2.1A I(D), 100V, 0.576ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size61KB,1 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric View All

ZXMP10A08GTA Overview

Power Field-Effect Transistor, 2.1A I(D), 100V, 0.576ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

ZXMP10A08GTA Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
Parts packaging codeSOT-223
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)2.1 A
Maximum drain-source on-resistance0.576 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
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